Abstract:We present low-frequency Raman scattering measurements on self-assembled Ge/Si quantum dot superlattice samples grown by molecular beam epitaxy. The samples had different growth parameters, such as the number of periods, nominal thicknesses of Ge layers, and growth temperatures. Raman scattering peaks were observed in the low-frequency region (<30cm(-1)), which were attributed to the folded acoustic phonon modes related to the periodicity of the Ge/Si quantum dot superlattices. We applied Rytov's model to calculate the frequencies of the folded acoustic phonons in the Ge/Si quantum dot superlattices. The calculated frequencies were in good accordance with the experimental results among most of the samples. It was observed from the experiments that the Raman peak intensities decreased with the increased order of the folded acoustic phonons. Raman peak intensities from different order folded acoustic phonons were explained by photoelastic effect theory. It was also found that the intensities of Raman peaks were related to the Ge layer thickness and the periods of the Ge/Si quantum dot superlattices: the thinner the Ge layer thickness, the lower the intensity; the smaller the periods, the lower the intensity of the Raman peaks.

Determination of Photoelastic Constant Ratio of the Two Components in Ge X Si 1- X /si Superlattice

Semiconductor Photoelastic Constants Measured by Light Scattering in Superlattices.

Raman Scattering Intensities of Folded Longitudinal Acoustic Phonons in Ge X Si 1- X / Si Superlattices

Determination of Acoustic Velocities of Gexsi1-X Alloys in Superlattices by Raman-Scattering

Light Scattering by Superlattice Acoustic Modes at Critical Points of the Brillouin Zone

Optical properties of Ge/Si quantum dot superlattices

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Vibrational properties of Si/Ge superlattices

Effect of layer thickness variation on light scattering by acoustic phonons in SiGe/Si superlattices

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Interface Broadening And Raman Scattering In Si1-Xgex/Si Superlattices

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Vibrational Properties of Si/Ge and Α-Sn/ge Superlattices with Intermixed Interfaces

Theory of Light Scattering by Longitudinal-Acoustic Phonons in Superlattices.

Ellipsometric Properties of GexSi1−x Superlattices

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of GexSi1−x/Si Superlattices

SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE

Interface Alloying Effects on the LO and TO Phonons in Si/Ge Superlattices.

Contribution of Strain-Induced Modulation to the Sound Velocity in Lattice-Mismatched Quasiperiodic Superlattices

Folded Acoustic Phonon Modes in Ge/Si Quantum Dot Superlattices with Different Periods