Ellipsometric Properties of GexSi1−x Superlattices
LH QIN,YD ZHENG,R ZHANG,D FENG
DOI: https://doi.org/10.1016/0749-6036(92)90312-s
IF: 3.22
1992-01-01
Superlattices and Microstructures
Abstract:The fundamental ellipsometric equations and properties of GexSi1−x superlattices are studied in our paper. Relationships between ellipsometric angles and the superlattice structure parameters, including sublayer thickness, composition, and superlattice period number, are discussed. Multiple-angle-of-incidence (MAI) ellipsometry at 632.8 nm wavelength is used to measure GexSi1−x superlattice samples which were fabricated by a Rapid Radiant Heating, Very Low Pressure CVD (RRH/VLP-CVD) system. Various structure parameters of superlattice sublayers, such as the thickness, complex refractive index, and composition, are achieved precisely and simultaneously. The results obtained from ellipsometry are consistent with those from sample growth conditions and other characterization techniques. The method is nondestructive and suitable for other kinds of semiconductor superlattices.