Abstract:We have made a comprehensive photoluminescence (PL) study of the low lying conduction band states of (GaAs)m/(AlAs)n type-II short-period superlattices (SL) with m, n ⩽ 4, in order to determine their energy and symmetry. The symmetry is found from the shift and splitting of the levels under uniaxial stress, and from the no-phonon oscillator strengths determined by time-resolved PL. Our samples are found to be true superlattices obeying the optical selection rules predicted by the space group symmetry, which determines whether a transition is indirect or pseudo-direct. However, selection rules depending on parity with respect to reflection in the growth plane are not obeyed. The results are compared with theoretical calculations from the literature. When strain due to lattice mismatch is taken into account, the ordering of the levels is found to agree with the most recent calculations, except for the case m = n = 1. In this SL the lowest conduction band state is found to derive from the bulk X valley, rather than from the L valley as predicted. We confirm that this discrepancy can be resolved if there is an ordered interchange of a certain fraction of the Ga and Al atoms, and our data support the theoretical prediction that such an ordered intermixed SL may in fact be more stable than either the perfect SL or the random alloy.

Symmetry of the Lowest Conduction Band States in Very Short-Period GaAsAlAs Superlattices

Electronic states in GaAs-AlAs short-period superlattices: energy levels and symmetry

Space group symmetry of the conduction band minimum in very short period GaAsAlAs superlattices

Energy-Levels of Very Short-Period (Gaas)n-(Alas)n Superlattices

Energy levels of very short‐period (GaAs)<sub><i>n</i></sub>‐(AlAs)<sub><i>n</i></sub>superlattices

Electronic states in GaAs-AlAs short-period superlattices

Conduction-band Minimum of (gaas)1/(alas)1 Superlattices: Relationship to X Minimum of AlAs.

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

A coupled Raman-Brillouin study of direct and folded acoustic modes in long-period GaAsAlAs superlattices

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Coupled Brillouin-Raman Study of Direct and Folded Acoustic Modes in Gaas-Alas Superlattices

Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation

Г-Г Photoluminescence from Type II Short-Period GaAs-AlAs Superlattices

Enhancement of the photoluminescence intensity in short-period GaAs/AlAs superlattices with different well and barrier thickness

Self-consistent Calculation of Electronic Subbands in Corrugated Lateral-Surface Superlattices

Optical Properties of Ordered and Randomly Disordered AlAs/GaAs Short-Period Superlattices.

Light Scattering by Superlattice Acoustic Modes at Critical Points of the Brillouin Zone

Optimum Growth Parameters of InAs/AlSb Superlattices for Interband Cascade Lasers

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Analysis Of Gasb/Gaas Superlattices Structure By Photoluminescence And X-Ray Diffraction

Electronic States in GaAs-AlAs Lateral-Surface Superlattices Produced by Deposition of AlAs and GaAs Fractional Layers on (001) Vicinal GaAs Substrates