Abstract:We have conducted As and Ga Nuclear Magnetic Resonance (NMR) experiments to investigate order/disorder in AlxGa1 xAs lift-off films with x B 0.297 and 0.489. We were able to identify all possible As(AlnGa4 n) sites with n = 0–4 coordinations in As NMR spectra using spin-echo experiments at 18.8 Tesla. This was achieved by employing high rf field strengths using a small solenoid coil and an NMR probe specifically designed for this purpose. Spectral deconvolution, using an evolutionary algorithm, complies with the absence of long-range order if a CuAu based order parameter is imposed. An unconstrained fit shows a deviation of the statistics imposed by this type of ordering. The occupational disorder in the Ga and Al positions is reflected in a distribution of the Electric Field Gradients (EFGs) experienced at the different arsenic sites. We established that this can be modelled by summing the effects of the first coordination sphere and a Czjzek type distribution resulting from the compositional variation in the Al/Ga sub-lattice in the higher coordination spheres. Ga 3QMAS and nutation data exclude the presence of highly symmetric sites and also show a distribution in EFG. The experimentally obtained quadrupolar interactions are in good agreement with calculations based on Density Functional Theory (DFT). Using additivity of EFG tensors arising from distant charge perturbations, we could use DFT to model the EFG distributions of the n = 0–4 sites, reproducing the Czjzek and extended Czjzek distributions that were found experimentally. On the basis of these calculations we conclude that the As quadrupolar interaction is sensitive to compositional modulations up to the 7th coordination shell in these systems.

Space group symmetry of the conduction band minimum in very short period GaAsAlAs superlattices

Electronic states in GaAs-AlAs short-period superlattices: energy levels and symmetry

Symmetry of the Lowest Conduction Band States in Very Short-Period GaAsAlAs Superlattices

Energy levels of very short‐period (GaAs)<sub><i>n</i></sub>‐(AlAs)<sub><i>n</i></sub>superlattices

Energy-Levels of Very Short-Period (Gaas)n-(Alas)n Superlattices

Conduction-band Minimum of (gaas)1/(alas)1 Superlattices: Relationship to X Minimum of AlAs.

Electronic states in GaAs-AlAs short-period superlattices

Г-Г Photoluminescence from Type II Short-Period GaAs-AlAs Superlattices

Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation

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A solid-state NMR and DFT study of compositional modulations in Al x Ga

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Electronic Structures of Gaas/Alas Lateral Superlattices

Electronic Structures and Band Offsets of Heterocrystalline Superlattices (3C-Aln)3n/(2h-aln)2…

Valence Band Structures of Gaas/Alas Lateral Superlattices

Unconventional superconductivity and Surface pairing symmetry in Half-Heusler Compounds

Investigation on the Quantum-Well Structure of A Gaas/Al0.3ga0.7as Superlattice Grown on A Misoriented Substrate

Abnormal Selection Rules of Interface Modes in Ultrathin GaAs/AlAs Superlattice

Coupled Brillouin-Raman Study of Direct and Folded Acoustic Modes in Gaas-Alas Superlattices

Enhancement of the photoluminescence intensity in short-period GaAs/AlAs superlattices with different well and barrier thickness

Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure