Abstract:We have conducted As and Ga Nuclear Magnetic Resonance (NMR) experiments to investigate order/disorder in AlxGa1 xAs lift-off films with x B 0.297 and 0.489. We were able to identify all possible As(AlnGa4 n) sites with n = 0–4 coordinations in As NMR spectra using spin-echo experiments at 18.8 Tesla. This was achieved by employing high rf field strengths using a small solenoid coil and an NMR probe specifically designed for this purpose. Spectral deconvolution, using an evolutionary algorithm, complies with the absence of long-range order if a CuAu based order parameter is imposed. An unconstrained fit shows a deviation of the statistics imposed by this type of ordering. The occupational disorder in the Ga and Al positions is reflected in a distribution of the Electric Field Gradients (EFGs) experienced at the different arsenic sites. We established that this can be modelled by summing the effects of the first coordination sphere and a Czjzek type distribution resulting from the compositional variation in the Al/Ga sub-lattice in the higher coordination spheres. Ga 3QMAS and nutation data exclude the presence of highly symmetric sites and also show a distribution in EFG. The experimentally obtained quadrupolar interactions are in good agreement with calculations based on Density Functional Theory (DFT). Using additivity of EFG tensors arising from distant charge perturbations, we could use DFT to model the EFG distributions of the n = 0–4 sites, reproducing the Czjzek and extended Czjzek distributions that were found experimentally. On the basis of these calculations we conclude that the As quadrupolar interaction is sensitive to compositional modulations up to the 7th coordination shell in these systems.

Conduction-band Minimum of (gaas)1/(alas)1 Superlattices: Relationship to X Minimum of AlAs.

Symmetry of the Lowest Conduction Band States in Very Short-Period GaAsAlAs Superlattices

Space group symmetry of the conduction band minimum in very short period GaAsAlAs superlattices

Electronic states in GaAs-AlAs short-period superlattices

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Energy-Levels of Very Short-Period (Gaas)n-(Alas)n Superlattices

Electronic states in GaAs-AlAs short-period superlattices: energy levels and symmetry

Energy levels of very short‐period (GaAs)<sub><i>n</i></sub>‐(AlAs)<sub><i>n</i></sub>superlattices

Electronic Structure of Free-Standinggaas∕algaasnanowire Superlattices

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Electronic Structures of Gaas/Alas Lateral Superlattices

Valence Band Structures of Gaas/Alas Lateral Superlattices

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Spontaneous Compositional Superlattice And Band-Gap Reduction In Si-Doped Alxga1-Xn Epilayers

A solid-state NMR and DFT study of compositional modulations in Al x Ga

Semiconductor Photoelastic Constants Measured by Light Scattering in Superlattices.

Г-Г Photoluminescence from Type II Short-Period GaAs-AlAs Superlattices

Electronic Properties of Vacancy‐Induced Structures in AlAs/GaAs Superlattices

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications

Optical Transitions In Ganas/Gaas Single Quantum Well