Abstract:Thermal dissociation of free and acceptor-bound quasi-two-dimensional positive trions is investigated by measuring the temperature dependence of the integrated emission intensity in magnetic fields up to 17 T in high quality GaAs/AlxGa1-xAs quantum wells. Three distinct dissociation processes are observed for the well-resolved hole cyclotron replicas ("shake-up") of positive trions bound to neutral acceptors in the spin-doublet state (SU-A(0)X(d)(+)). To demonstrate that the hole involved in the shake-up process is not bound by the Coulomb interaction to the charged A(0)X(+) complex, we calculate the valence Landau levels using the Luttinger model beyond the axial approximation. The calculated value of the hole cyclotron energy agrees well with the experimental data for the energy separation of the A(0)X(+) and SU-A(0)X(+) lines, determined from the emission spectra. At low temperatures, below 6 K, the dominant dissociation results in a free hole and an exciton bound to the neutral acceptor in the spin-singlet or -triplet state, (A(0)X(d)(+) -> A(0)X(s) + h or A(0)X(t) + h). At higher temperatures, above 9 K, the dissociation into the free positive trion and the neutral acceptor (A(0)X(d)(+) -> A(0) + X+) predominates. From the temperature evolution of the integrated emission of the free trion lines (X+) we evaluate the transition energy between the two triplet trion states, the dark one (X-td(+)) and the bright one (X-tb(+)). The ionization energies of all detected dissociation processes are compared with the spectral positions of the relevant radiative recombination lines from which excellent quantitative agreement is achieved.

Acceptor-Related Radiative Recombination of Quasi-Two-Dimensional Electrons in Modulation-Doped Gaas/Alxga1-Xas Heterojunctions

Thermal Dissociation Of Free And Acceptor-Bound Positive Trions From Magnetophotoluminescence Studies Of High Quality Gaas/Alxga1-Xas Quantum Wells

Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

Capture and recombination of acceptor bound excitons in the transition region from a two‐dimensional to a quasi‐three‐dimensional GaAs/AlGaAs system

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Temperature Quenching of Tunable Tunneling Recombination Emission in AlxGa1−xAs N-I-p-i Doping Structures

Effect of Substrate Photoexcitation on Channel Conduction in A Modulation-Doped Alxga1-Xas/Gaas Heterostructure

Conduction electrons in acceptor-doped GaAs/GaAlAs heterostructures: a review

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Transition of Radiative Recombination Channels from Delocalized States to Localized States in A Gainp Alloy with Partial Atomic Ordering: A Direct Optical Signature of Mott Transition?

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The Excitonic Properties and Temperature Behaviour of the Photoluminescence from GaAs-GaAlAs Multiple Quantum Well Structures

Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

Radiative Recombination Characteristics in GaAs Multilayer N+−i Interfaces

Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

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Unusual Carrier Thermalization in a Dilute Ga As 1 − X N X Alloy

Temperature- and Current-Dependent Spontaneous Emission Study on 2 Μm InGaSb/AlGaAsSb Quantum Well Lasers

Hole Migration and Optically Induced Charge Depletion in GaSb/GaAs Wetting Layers and Quantum Rings

Infrared Magneto-Optical Absorption Of Shallow Donors In Gaas/Gaasal Quantum Dots

Radiative Recombination Mechanism of Carriers in InGaN/AlInGaN Multiple Quantum Wells with Varying Aluminum Content