Abstract:The temperature-dependent intensities of the exciton (X) and biexciton (XX) peaks from single GaAs cone-shell quantum dots (QDs) are studied with micro photoluminescence (PL) at varied excitation power and QD size. The QDs are fabricated by filling self-assembled nanoholes, which are drilled in an AlGaAs barrier by local droplet etching (LDE) during molecular beam epitaxy (MBE). This method allows the fabrication of strain-free QDs with sizes precisely controlled by the amount of material deposited for hole filling. Starting from the base temperature T = 3.2 K of the cryostat, single-dot PL measurements demonstrate a strong enhancement of the exciton emission up to a factor of five with increasing T. Both the maximum exciton intensity and the temperature Tx,max of the maximum intensity depend on excitation power and dot size. At an elevated excitation power, Tx,max becomes larger than 30 K. This allows an operation using an inexpensive and compact Stirling cryocooler. Above Tx,max, the exciton intensity decreases strongly until it disappears. The experimental data are quantitatively reproduced by a model which considers the competing processes of exciton generation, annihilation, and recombination. Exciton generation in the QDs is achieved by the sum of direct excitation in the dot, plus additional bulk excitons diffusing from the barrier layers into the dot. The thermally driven bulk-exciton diffusion from the barriers causes the temperature enhancement of the exciton emission. Above Tx,max, the intensity decreases due to exciton annihilation processes. In comparison to the exciton, the biexciton intensity shows only very weak enhancement, which is attributed to more efficient annihilation processes.

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Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Thermal Quenching Of Luminescence From Buried And Surface Ingaas Self-Assembled Quantum Dots With High Sheet Density

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Temperature－Induced Switching－Over of the Luminescence Transitions in GaInNAs／GaAs Quantum Wells

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Temperature Dependence of Optical Transitions of One Dimensional InGaAs/GaAs Quantum Structures

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The Excitonic Properties and Temperature Behaviour of the Photoluminescence from GaAs-GaAlAs Multiple Quantum Well Structures

Optical Investigations On Pseudomorphic: Delta-Doped Algaas/Ingaas/Gaas Quantum Wells

Temperature-Enhanced Exciton Emission from GaAs Cone-Shell Quantum Dots

Spontaneous Emission Mechanisms of GaInAsN∕GaAs Quantum Dot Systems

Temperature Dependence of Exciton Complexes Photoluminescence Spectra in Self-Assembled Inas/Gaas Quantum Rings

Acceptor-Related Radiative Recombination of Quasi-Two-Dimensional Electrons in Modulation-Doped Gaas/Alxga1-Xas Heterojunctions

The role of different types of dopants in 1.3 <i></i>m InAs/GaAs quantum-dot lasers

PHOTOLUMINESCENCE STUDY OF MULTILAYER in In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As QUANTUM DOT AT VARIOUS TEMPERATURE

Optical Transition and Carrier Relaxation in Self-Assembled InAs/GaAs Quantum Dots with InAlAs and InGaAs Combination Cap Layer by Resonant Excitation

Temperature- and Current-Dependent Spontaneous Emission Study on 2 Μm InGaSb/AlGaAsSb Quantum Well Lasers

Temperature-Dependent Luminescence Originating from the Recombination of Excitons in Organic Light-Emitting Materials

Resolving Exciton Diffusion in Ingaas Quantum Wells Using Micro-Photoluminescence Mapping with A Lateral Excitation