Temperature Dependence of Optical Transitions of One Dimensional InGaAs/GaAs Quantum Structures

Untrafast Photonic Materials and Applications, Brooklyn College of CUNY,Holden Todd,Wang Zhiming,Mao Samuel S.,Salomo Gregory J.
DOI: https://doi.org/10.1557/proc-0959-m19-03
2006-01-01
MRS Proceedings
Abstract:We have studied the temperature dependence of CER spectra of layered InGaAs QWRs and QDCs and found strain-induced splitting of lh and hh states occur in both InGsAs and GaAs layers. By fitting experimental data using Varshni law and Bose-Einstein type relation, various parameters are obtained, which are similar to those of bulk GaAs. We pointed out that a caution must be excised when extracting the electron-phonon interaction parameters by subtracting the thermal dilation part from the experimental data of the embedded semiconductor microstructures because in these structures the temperature-induced lattice-dilation may produce additional strain besides the lattice mismatch.
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