Abstract:A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

Temperature Dependence of Optical Transitions of One Dimensional InGaAs/GaAs Quantum Structures

Temperature-Dependent Carrier Dynamics In Self-Assembled Ingaas Quantum Dots

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Spectral Broadening and Population Relaxation in A Gaas Interfacial Quantum Dot Ensemble and Quantum Well Nanostructure

Revealing Exciton Dephasing and Transport Dynamics in Semiconductor Quantum Well - Quantum Dot Systems Using Optical 2d Fourier Transform Spectroscopy

Effects of Growth Temperature on the Structural and Optical Properties of 1.6μm GaInNAs∕GaAs Multiple Quantum Wells

Temperature behavior of excitation emission in self-organized InAs quantum dots

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Temperature Dependence of Exciton Complexes Photoluminescence Spectra in Self-Assembled Inas/Gaas Quantum Rings

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector

Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

Optical Transitions In Ganas/Gaas Single Quantum Well

Exciton-Exciton and Exciton-Phonon Interactions in an Interfacial Gaas Quantum Dot Ensemble

Effect of temperature on In_x Ga_(1-x) As/GaAs quantum dot lasing

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Effects of Photon and Thermal Coupling Mechanisms on the Characteristics of Self-Assembled Inas/Gaas Quantum Dot Lasers

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Anomalous Temperature Effect in Weakly Coupled Superlattices: Carrier Transport in a THz Quantum Cascade Laser