Abstract:In this work, in silico methods are used to study the temperature effect of the emission properties, including the electron work function, of quasi 2D glass-like carbon (GLC) films deposited on few/multi-layer Si/SiO2 substrates of two types. The equilibrium configuration of the structures under study at different temperatures is established by molecular dynamics (MD) method using reactive force field (ReaxFF) due to the polyatomic nature of supercells. The electronic structure is determined using the self-consistent charge density-functional based tight-binding (SCC-DFTB) method. The temperature range under consideration is 50-1000 K. The effect of one sub-strate layer and several substrate layers on the electronic structure and emission properties of GLC is considered. In the case of one layer of Si and SiO2, in fact, the functionalization of the GLC film occurs. This leads to a decrease in the work function by -6 % and -21 %, respectively, at a temperature of 300 K. As the temperature increased to 1000 K, the work function of the GLC with one SiO2 layer further decreased by -7 %. An increase in the substrate thickness to five Si layers and two SiO2 layers leads to a decrease in the work function by 7.3 % and 20.5 %, respectively. An increase in temperature leads to a change in the work function of the GLC with five Si substrate layers and two SiO2 layers by 0.2 % and 3.8 %, respectively.

Effect of temperature on In_x Ga_(1-x) As/GaAs quantum dot lasing

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Effect of junction temperature on 1.3 μ m InAs/GaAs quantum dot lasers directly grown on silicon

Temperature Dependence of Optical Transitions of One Dimensional InGaAs/GaAs Quantum Structures

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Molecular Beam Epitaxial Growth Of Inas Quantum Dots On Gaas For High Characteristics Temperature Lasers

Effects of Photon and Thermal Coupling Mechanisms on the Characteristics of Self-Assembled Inas/Gaas Quantum Dot Lasers

Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications

Exciton localization and temperature stability in self‐organized InAs quantum dots

Relation between photocurrent and DLTS signals observed for quantum dot systems

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Temperature behavior of excitation emission in self-organized InAs quantum dots

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

Carrier Tunneling Effects on the Temperature Dependent Photoluminescence of Inas/Gaas Quantum Dot: Simulation and Experiment

Electron radiation effects on InAs/GaAs quantum dot lasers

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Simple Theoretical Model for the Temperature Stability of InAs/GaAs Self-Assembled Quantum Dot Lasers with Different P-Type Modulation Doping Levels

The role of different types of dopants in 1.3 <i></i>m InAs/GaAs quantum-dot lasers