Abstract:Wavelength tunable lasers are increasingly needed as key components for wavelength resource management technologies in future dense wavelength division multiplexing (DWDM) systems. While material systems with multiple quantum wells as an active region are widely used in long‐wavelength tunable lasers, the unique advantages of InAs/GaAs quantum dots (QDs) for low‐power operation, excellent thermal stability, and wide spectral bandwidth may open a new avenue in this field. Combining the advantages of QDs with a special designed half‐wave coupled cavity structure, directly modulated, single‐mode, tunable InAs/GaAs QD lasers are demonstrated at 1.3 µm wavelength range. The half‐wave coupler provides an active–active coupled‐cavity tunable structure without involving gratings or multiple epitaxial growths, producing synchronous power transfer in the two output waveguides and high single‐mode selectivity. 27‐channel wavelength switching is achieved with side‐mode‐suppression‐ratio of around 35 dB. Under continuous‐wave electrical injection, over 9 mW output power can be measured with 716 kHz Lorentzian linewidth, 4 GHz 3‐dB bandwidth, and 8 Gbit s−1 non‐return‐to‐zero signal modulation by directly probing the chip.

The role of different types of dopants in 1.3 <i></i>m InAs/GaAs quantum-dot lasers

Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry–Perot and Distributed-Feedback Laser Diodes

Significantly improved performances of 1.3 μm InAs/GaAs QD laser by spatially separated dual-doping

Simple Theoretical Model for the Temperature Stability of InAs/GaAs Self-Assembled Quantum Dot Lasers with Different P-Type Modulation Doping Levels

Molecular Beam Epitaxial Growth Of Inas Quantum Dots On Gaas For High Characteristics Temperature Lasers

P -Doped 1.3μm InAs∕GaAs Quantum-Dot Laser with a Low Threshold Current Density and High Differential Efficiency

High Performance 1.3μm InAs/GaAs Quantum Dot Lasers with Low Threshold Current and Negative Characteristic Temperature

Effects of Modulation P-Doping on Thermal Stability of InAs/GaAs Quantum Dot Superluminescent Diodes

Temperature insensitive linewidth enhancement factor of p-type doped InAs∕GaAs quantum-dot lasers emitting at 1.3μm

Temperature Insensitive Linewidth Enhancement Factor Of P-Type Doped Inas/Gaas Quantum-Dot Lasers Emitting At 1.3 Mu M

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

Optimization of InAs/GaAs Quantum-Dot Structures and Application to 1.3-Μm Mode-Locked Laser Diodes

25 Gb/s Directly Modulated Ground-State Operation of 1.3 Μm InAs/GaAs Quantum Dot Lasers Up to 75°C

Effects of P-Type Doping on the Optical Properties of Inas/Gaas Quantum Dots

13 Μm InAs/GaAs Quantum Dot Lasers on Silicon with GaInP Upper Cladding Layers

Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3- μ m quantum dot lasers

Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3-$\Mu$m P-Type Modulation-Doped Quantum-Dot Laser

Novel, Simple Model for High Temperature Stability of InAs/GaAs Self-assembled Quantum Dot Lasers with Optimum P-Type Modulation Doping

PHYSICA POLONICA A No . 2 1 . 16 μ m InAs / GaAs Quantum Dot Laser grown by Metal Organic Chemical Vapor Deposition