Abstract:Self-assembly effects in strained epitaxy have made it possible to grow high quality semiconductor dot structures. Recently several groups have shown good performance in quantum dot lasers. In particular for the In0.4Ga0.6As/GaAs quantum dot lasers differential gain of similar to 10(-14) cm(2) and modulation bandwidths of 7-8 GHz have been demonstrated [1,2].The following observations suggest that the operation of self-assembled lasers will be different from conventional semiconductor lasers in important aspects: (i) the electronic states are discrete - like those in an atomic system; (ii) the separation of the ground and excited states in the quantum dot conduction band states is larger than the optical phonon energy suggesting that processes other than optical phonon interaction are responsible for carrier thermalization and modulation; (iii) the high strain in the system suggests that simple effective mass pictures will not be accurate in describing the system.In this paper, we examine the electronic, optical and dynamic properties of self-assembled lasers. The formalism is based on an eight-band k.p model [3] and a modified rate equations for quantum dots. A Monte-Carlo simulation is also done to compare with the rate equation results.Our results will focus on the following issues: (i) the role of cavity loss and quantum dot density in determining the position of the lasing peaks (i.e whether ground state or excited state lasing will occur); (ii) the dynamic response of quantum dot lasers and the gain compression factor due to Pauli exclusion principle.

Novel, Simple Model for High Temperature Stability of InAs/GaAs Self-assembled Quantum Dot Lasers with Optimum P-Type Modulation Doping

Simple Theoretical Model for the Temperature Stability of InAs/GaAs Self-Assembled Quantum Dot Lasers with Different P-Type Modulation Doping Levels

The role of different types of dopants in 1.3 <i></i>m InAs/GaAs quantum-dot lasers

Effects of Photon and Thermal Coupling Mechanisms on the Characteristics of Self-Assembled Inas/Gaas Quantum Dot Lasers

High Performance 1.3μm InAs/GaAs Quantum Dot Lasers with Low Threshold Current and Negative Characteristic Temperature

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Temperature-dependent large signal modulation and Auger recombination in In/sub 0.4/Ga/sub 0.6/As quantum-dot lasers

P -Doped 1.3μm InAs∕GaAs Quantum-Dot Laser with a Low Threshold Current Density and High Differential Efficiency

1.3 [micro sign]m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3-$\Mu$m P-Type Modulation-Doped Quantum-Dot Laser

Self-Pulsation Dynamics in GaAs/AIGaAs Quantum Cascade Lasers

Numerical Simulation of the Dynamic Response of Self-Assembled In0.4ga0.6as/Gaas Quantum Dot Lasers

High Temperature Characteristics Of A 2 M Ingasb/Algaassb Passively Mode-Locked Quantum Well Laser

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers

Self-Pulsation Dynamics in GaAs/AlGaAs Quantum Cascade Lasers

Temperature behavior of excitation emission in self-organized InAs quantum dots

Ultra-high thermal stability InAs/GaAs quantum dot lasers grown on on-axis Si (001) with a record-high continuous-wave operating temperature of 150 °C

Significantly improved performances of 1.3 μm InAs/GaAs QD laser by spatially separated dual-doping