Abstract:The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate, we employed an engineered Ge-buffer on Si, used thermal cycle annealing, and introduced filtering layers, e.g., strained-layer superlattices, to control/reduce the threading dislocation density in the active part of the laser. In this way, a low defect density of 2.9 × 107 cm−2 could be achieved in the GaAs layer with a surface roughness of 1.01 nm. Transmission electron microscopy has been applied to study the effect of cycling, annealing, and filtering layers for blocking or bending threading-dislocation into the InAs QDs active region of the laser. In addition, the dependence of optical properties of InAs QDs on the growth temperature was also investigated. The results show that a density of 3.4 × 1010 InAs quantum dots could be grown at 450 °C, and the photoluminescence exhibits emission wavelengths of 1274 nm with a fullwidth at half-maximum (FWHM) equal to 32 nm at room temperature. The laser structure demonstrates a peak at 1.27 μm with an FWHM equal to 2.6 nm under a continuous-wave operation with a threshold current density of ∼158 A/cm2 for a 4-μm narrow-ridge width InAs QD device. This work, therefore, paves the path for a monolithic solution for photonic integrated circuits when III−V light sources (which is required for Si photonics) are grown on a Ge-platform (engineered Ge-buffer on Si) for the integration of the CMOS part with other photonic devices on the same chip in near future.

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

Optimization of InAs/GaAs Quantum-Dot Structures and Application to 1.3-Μm Mode-Locked Laser Diodes

Molecular Beam Epitaxial Growth Of Inas Quantum Dots On Gaas For High Characteristics Temperature Lasers

Optimisation of 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3- μ m quantum dot lasers

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

In Situ Annealing Enhancement of the Optical Properties and Laser Device Performance of InAs Quantum Dots Grown on Si Substrates.

P -Doped 1.3μm InAs∕GaAs Quantum-Dot Laser with a Low Threshold Current Density and High Differential Efficiency

13 Μm InAs/GaAs Quantum Dot Lasers on Silicon with GaInP Upper Cladding Layers

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

The role of different types of dopants in 1.3 <i></i>m InAs/GaAs quantum-dot lasers

Optimization of InAs/InGaAs Quantum-Dot Microdisk Lasers Directly Grown on Silicon

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

High Performance 1.3μm InAs/GaAs Quantum Dot Lasers with Low Threshold Current and Negative Characteristic Temperature

Electrically pumped 1.3-μm InAs/GaAs quantum dot laser monolithically grown on Si substrate lasing up to 111°C

Annealing Effect of the InAs Dot-in-well Structure Grown by MBE

1.3 Μm InAs/GaAs Quantum‐dot Laser Monolithically Grown on Si Substrates Operating over 100°C

Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate

Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

Significantly improved performances of 1.3 μm InAs/GaAs QD laser by spatially separated dual-doping