Abstract:Wavelength tunable lasers are increasingly needed as key components for wavelength resource management technologies in future dense wavelength division multiplexing (DWDM) systems. While material systems with multiple quantum wells as an active region are widely used in long‐wavelength tunable lasers, the unique advantages of InAs/GaAs quantum dots (QDs) for low‐power operation, excellent thermal stability, and wide spectral bandwidth may open a new avenue in this field. Combining the advantages of QDs with a special designed half‐wave coupled cavity structure, directly modulated, single‐mode, tunable InAs/GaAs QD lasers are demonstrated at 1.3 µm wavelength range. The half‐wave coupler provides an active–active coupled‐cavity tunable structure without involving gratings or multiple epitaxial growths, producing synchronous power transfer in the two output waveguides and high single‐mode selectivity. 27‐channel wavelength switching is achieved with side‐mode‐suppression‐ratio of around 35 dB. Under continuous‐wave electrical injection, over 9 mW output power can be measured with 716 kHz Lorentzian linewidth, 4 GHz 3‐dB bandwidth, and 8 Gbit s−1 non‐return‐to‐zero signal modulation by directly probing the chip.

Room Temperature Continuous-Wave Operation of Inas/Inp (100) Quantum Dot Lasers Grown by Gas-Source Molecular-Beam Epitaxy

Room temperature continuous wave operation of a heterojunction bipolar transistor laser

Molecular Beam Epitaxial Growth Of Inas Quantum Dots On Gaas For High Characteristics Temperature Lasers

25 Gb/s Directly Modulated Ground-State Operation of 1.3 Μm InAs/GaAs Quantum Dot Lasers Up to 75°C

Inas/Ingaasp/Inp Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates

High Performance 2150 Nm-Emitting InAs/InGaAs/InP Quantum Well Lasers Grown by Metalorganic Vapor Phase Epitaxy

Room-Temperature Preperation of Ingaasn Quantum Dot Lasers Grown by Mocvd

Electrically Pumped Continuous‐wave 1.3‐µm InAs/GaAs Quantum Dot Lasers Monolithically Grown on Si Substrates

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Room-temperature Lasing at 1.82μm of GaInSb∕AlGaSb Quantum Wells Grown on GaAs Substrates Using an Interfacial Misfit Array

GaAs/AlGaAs quantum cascade lasers

Uncooled 2.5 Gb/S Operation of 1.3 Mu M Gainnas Dqw Lasers over A Wide Temperature Range

High Temperature Characteristics Of A 2 M Ingasb/Algaassb Passively Mode-Locked Quantum Well Laser

Continuous-Wave Emission Of Iii-V Quantum Dot Lasers Grown Directly On Si Substrates

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate

1.3 Μm InAs/GaAs Quantum‐dot Laser Monolithically Grown on Si Substrates Operating over 100°C

Highly-Strained InGaAs/GaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy