Broadband Tunable InAs/InP Quantum Dot External-Cavity Laser Emitting Around 1.55 Μm.

F. Gao,S. Luo,H. M. Ji,X. G. Yang,P. Liang,T. Yang
DOI: https://doi.org/10.1364/oe.23.018493
IF: 3.8
2015-01-01
Optics Express
Abstract:We report a broadband tunable external-cavity laser based on InAs/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. It is found that high AsH₃ flow during the interruption after QD deposition greatly promotes QD ripening, which improves the optical gain of QD active medium in lower energy states. Combined with anti-reflection/high-reflection facet coatings, a broadly tunable InAs/InP QD external-cavity laser was realized with a tuning range of 140.4 nm across wavelengths from 1436.6 nm to 1577 nm at a maximum output power of 6 mW.
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