Abstract:The discovery of different types of nanomaterials including the one-dimensional and two-dimensional materials used as saturable absorbers (SAs) in the applications of ultrafast lasers in recent years increases the ultrafast laser design flexibility and boosts the laser performances. A major research avenue is to explore the potential of nanomaterials for further enhancing the performances of ultrafast lasers in terms of pulse power. To this aim, in this study, using a hot-injection method and drop-coating technology, a fiber-based lead sulfide quantum dot (PbS QD) is synthesized, and its potential as a SA for the generation of higher-power pulses is demonstrated in an erbium-doped fiber laser (EDFL). Experimental results show that the optical damage threshold of the SA is greater than 152.6 mJcm2, and the modulation depth is up to 29.5. The implementation of the PbS QD as a SA placed in an EDFL enables the laser to yield 2.84 ps ultrashort pulses with an average output power of 59.4 mW at a repetition rate of 6.97 MHz. To the best of our knowledge, it is the highest average output power obtained in ultrafast fiber lasers mode-locked by zero-dimensional QD materials. The results suggest the great potential of PbS QDs in the application that requires the generation of high-power pulses in ultrafast lasers.

1.55-Μm Ultrashort Pulse InAs/InP Quantum Dot Mode-Locked Lasers with High Output Power

Ultrashort Pulse and High Power Mode-Locked Laser with Chirped InAs/InP Quantum Dot Active Layers

Single-section Mode-Locked 1.55-Μm InAs/InP Quantum Dot Lasers Grown by MOVPE

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

PbSe Quantum Dot Doped Mode-Locked Fiber Laser.

Flat-topped Ultrabroad Stimulated Emission from Chirped InAs/InP Quantum Dot Laser with Spectral Width of 92 Nm

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Ultra-broadband Tunable Single- and Double-Mode InAs/InP Quantum Dot External-Cavity Laser Emitting Around 165 Μm

Ultra-broadband tunable single- and double-mode InAs/InP quantum dot external-cavity laser emitting around 1.65 μm

Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate

Modal Gain Characteristics of a 2 Μm InGaSb/AlGaAsSb Passively Mode-Locked Quantum Well Laser

Broadband Tunable InAs/InP Quantum Dot External-Cavity Laser Emitting Around 1.55 Μm.

Inas/Ingaasp/Inp Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

Single Mode Operation of Short-Cavity Quantum Cascade Lasers

Diode-pumped, 6.8 GHz, Solid-State Waveguide Laser Mode-Locked at 1.5 Μm by a Quantum-Dot SESAM

Monolithically integrated tunable mode-locked laser diode source with individual pulse selection and post-amplification

Diode-Pumped Nanosecond Pulsed Laser With Pulse-Transmission-Mode Q-Switch

High-Power Mode-Locked Fiber Laser Using Lead Sulfide Quantum Dots Saturable Absorber

10 GHz Pulse Repetition Rate ERGO Laser Modelocked by a 1550 Nm InAs/GaAs Quantum-Dot SESAM