Abstract:Chip-based cavity quantum electrodynamics (QED) devices consisting of a self-assembled InAs quantum dot (QD) coupled to a high quality factor GaAs microdisk cavity are coherently probed through their optical channel using a fiber taper waveguide. We highlight one particularly important aspect of this all-fiber measurement setup, which is the accuracy to which the optical coupling level and optical losses are known relative to typical free-space excitation techniques. This allows for precise knowledge of the intracavity photon number and measurement of absolute transmitted and reflected signals. Resonant optical spectroscopy of the system under both weak and strong driving conditions are presented, which when compared with a quantum master equation model of the system allows for determination of the coherent coupling rate between QD exciton and optical cavity mode, the different levels of elastic and inelastic dephasing of the exciton state, and the position and orientation of the QD within the cavity. Pump-probe measurements are also performed in which a far off-resonant red-detuned control laser beam is introduced into the cavity. Rather than producing a measurable ac-Stark shift in the exciton line of the QD, we find that this control beam induces a saturation of the resonant system response. The broad photoluminescence spectrum resulting from the presence of the control beam in the cavity points to sub-bandgap absorption in the semiconductor, and the resulting free-carrier generation, as the likely source of system saturation.

Tunable external cavity laser diode based on wavelength controlled self-assembled InAs quantum dots for swept-source optical coherence tomography applications at 1100 nm wavelength band

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Ultra-broadband Tunable Single- and Double-Mode InAs/InP Quantum Dot External-Cavity Laser Emitting Around 165 Μm

894 nm external cavity diode laser

Broadband Tunable InAs/InP Quantum Dot External-Cavity Laser Emitting Around 1.55 Μm.

Widely Tunable InAs/InP Quantum-Dot External-Cavity Laser with Bent-Waveguide Structure

Ultra-broadband tunable single- and double-mode InAs/InP quantum dot external-cavity laser emitting around 1.65 μm

GaAs/AlGaAs-Based 870-Nm-band Widely Tunable Edge-Emitting V-Cavity Laser

Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition*

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon

Silicon photonics hybrid wavelength tunable laser diode using curved directional couplers with 145 nm tunable range

Investigations of a coherently driven semiconductor optical cavity QED system

Compact, Ultra-Tunable InGaSb/AlGaAsSb Si External Cavity Laser at the Mid-Infrared (MIR)

Fiber-Integrated Reversibly Wavelength-Tunable Nanowire Laser Based on Nanocavity Mode Coupling.

Tunable Diode Laser with a Short Tandem External Cavity

Extended Ultrahigh-Q-cavity Diode Laser.

Compact Tunable Laser with InGaAsP Photonic Crystal Nanorods for C-Band Communication