Extended Ultrahigh-Q-cavity Diode Laser.

Zhenda Xie,Wei Liang,Anatoliy A. Savchenkov,Jinkang Lim,Jan Burkhart,Mickey McDonald,Tanya Zelevinsky,Vladimir S. Ilchenko,Andrey B. Matsko,Lute Maleki,Chee Wei Wong
DOI: https://doi.org/10.1364/ol.40.002596
IF: 3.6
2015-01-01
Optics Letters
Abstract:We report on a study of a 698 nm extended cavity semiconductor laser with intracavity narrowband optical feedback from a whispering gallery mode resonator. This laser comprises an ultrahigh-Q (>10(10)) resonator supporting stimulated Rayleigh scattering, a diffraction grating wavelength preselector, and a reflective semiconductor amplifier. Single longitudinal mode lasing is characterized with sub-kilohertz linewidth and a 9 nm coarse tuning range. The laser has a potential application for integration with the 1S0-3P0 strontium transition to create compact precision atomic clocks.
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