Abstract:The “ $2~\mu \text{m}$ waveband”, specifically the $1.9~\mu \text{m}$ wavelength region, is playing an increasingly imperative role in photonics. Development into compact tunable light sources operating at the wavelength region can unlock numerous technological applications. Instances, while not exhaustive, include alleviating the capacity load in fiber communications, H 2 O spectroscopy, optical logic, signal processing as well as enabling the optical Kerr effect on silicon. Silicon photonics is a disruptive technology. Through mature silicon processing, recent developments suggest that silicon will emerge as the workhorse of integrated optics. While the realization of a monolithic light source has proved to be challenging, the hybrid/heterogenous Si platforms, consisting of silicon and III-V materials, has stepped to the fore. In this work, we present the study of Vernier-based hybrid silicon photonic wavelength-tunable lasers with an operating range of 1881–1947 nm (66 nm), subject to different coupling gaps (Gap mrr ) between the silicon microring resonators (MRRs) and bus waveguide. Wavelength tuning functionality is enabled via the thermo-optic effect of MRRs. Gap mrr , being the smallest feature in the assemble, is highly influential to the characteristics of the SHREC. As such, trends in hybrid laser performance with respect to Gap mrr are measured and analyzed. Slope efficiency, laser output power and side-mode suppression ratio of 0.232 W/A, 28 mW and 42 dB respectively are obtained across the developed lasers. Through the design of the Vernier spectrum and Gap mrr , tuning of laser wavelength from 1881–1947 nm can be achieved by applying only 47.2 mW of thermal power to a single MRR.

Silicon photonics hybrid wavelength tunable laser diode using curved directional couplers with 145 nm tunable range

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Compact and Low Power Consumption Hybrid Integrated Wavelength Tunable Laser Module Using Silicon Waveguide Resonators

Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Wavelength Tunable Cavity Mirror for Silicon Micro-Ring-Based Hybrid Integrated Lasers

Tunable V-Cavity Semiconductor Laser And Modules

Tunable Coupled-Cavity Semiconductor Laser Based on a Half-Wave Bow-Tie Coupler

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

C and L Bands Wavelength Tunable Laser with Silicon Photonic-wire Waveguide Micro-ring Resonators

Compact, Ultra-Tunable InGaSb/AlGaAsSb Si External Cavity Laser at the Mid-Infrared (MIR)

Wavelength switchable semiconductor laser using half-wave V-coupled cavities.

Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

Wavelength Switchable Semiconductor Laser Based on Half-Wave Coupled Fabry–Pérot and Rectangular Ring Resonators

Analysis of Compact Silicon Photonic Hybrid Ring External Cavity (SHREC) Wavelength-Tunable Laser Diodes Operating from 1881–1947 Nm

Full C and L Bands Wavelength Tunable Laser Module with Silicon Micro-Ring Resonators

Silicon Coupled Cavities As a Flexible Platform for Integrated Nonlinear Photonics

Tunable external cavity laser diode based on wavelength controlled self-assembled InAs quantum dots for swept-source optical coherence tomography applications at 1100 nm wavelength band

Novel Semiconductor Lasers and Integrated Photonic Devices

Quasi-Continuous Wavelength Tuning of Single-mode Interband Cascade Lasers Based on V-coupled Cavity

Wide Tunable Laser Based on Electrically Regulated Bandwidth Broadening in Polymer-Stabilized Cholesteric Liquid Crystal