Abstract:The technique of photoluminescence(PL) spectra is an important method for studying the properties of semiconductors and quantum wells since its high sensitiveness,convenience and non-destructive.This technique was used to study the single quantum well(QW) of In0.2Ga0.8As/GaAs in this paper.Different PL spectra were reported under different temperature,which ranged from 125 K to 260 K for a certain sample,and the PL spectra of the samples with different quantum well width were also reported.The paper reported that,for a certain sample,the peak of its PL spectra moved towards long wavelengh ranges with the temperature increa-sing,which means that the band gap of the SQW becomes narrower.Detail consideration suggested that this property was able to be described by the equation of Varshni for the bulk materials.So,the SQW is similar to its bulk material at this point.This was mainly because within certain thickness of SQW,there was no lattice misfit dislocation,and the fundamental structure of the energy gap will not change.It was also reported that,at certain temperature,the narrower was the SQW,the wider was its band gap.We performed a brief calculation by solve Schrdinger equation,and found that the experimental result fitted to the theoretical calculation.The relationship between full width at half maximum(FWHM) of PL peak and temperature of a certain sample and the relationship between(FWHM) and SQW width of different samples were also reported,at the same time,theoretical explanation was presented for these phenomenon.

Temperature－Induced Switching－Over of the Luminescence Transitions in GaInNAs／GaAs Quantum Wells

Temperature Dependence of the Photoluminescence Properties and the Research on the Mechanism of In0.2Ga0.8As/GaAs Single Quantum Well

Investigation of Photoluminescence and Photoreflectance in MBE-Grown GaInNAs/GaAs QWs

Anomalous Temperature Dependence of Photoluminescence in Gainnas/Gaas Multiple Quantum Wells

Temperature Dependence of PL Spectra of InGaAs/GaAs Single Quantum Well Properties

Spontaneous Emission Mechanisms of GaInAsN∕GaAs Quantum Dot Systems

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

Effects of growth temperature and rapid thermal annealing on luminescence properties of InGaAs/GaAs multiple quantum wells

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

A Comparison of Photoluminescence Properties of InGaAs/GaAs Quantum Dots with a Single Quantum Well

Temperature dependence of PL spectrum in researching InGaAs/GaAs single quantum well - art. no. 68380S

Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Temperature Dependence of PL Spectrum in Researching InGaAs/GaAs Single Quantum Well

Optical Study of Localized and Delocalized States in Gaasn/Gaas

The Excitonic Properties and Temperature Behaviour of the Photoluminescence from GaAs-GaAlAs Multiple Quantum Well Structures

Thermal Quenching Of Luminescence From Buried And Surface Ingaas Self-Assembled Quantum Dots With High Sheet Density

The Influence of Well Thickness on the Photoluminescence Properties of Blue-Violet Light Emitting InGaN/GaN Multiple Quantum Wells

Optical Transitions In Ganas/Gaas Single Quantum Well

Temperature Dependence of Photoluminescence Spectra for Green Light Emission from InGaN/GaN Multiple Wells.