Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Micro-Raman and Photoluminescence Studies of Neutron-Irradiated Gallium Nitride Epilayers

Raman Scattering and X-Ray Diffraction Study of Neutron Irradiated GaN Epilayers

Radiation-defect-dependent photoconductivity transients and photoluminescence in semi-insulating GaN

Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure

Strain Relaxation of GaN Heterostructure Induced by High-Energy Electron Irradiation

Structure and Luminescence of A-Plane GaN on R-Plane Sapphire Substrate Modified by Si Implantation*

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Secondary Ion Mass Spectroscopy and Photoluminescence Investigations on the Gan Epilayer Grown on Si Substrate

Au ion irradiation induces ultralow thermal conductivity in GaN

A Raman Scattering Study on Ion-Implanted Can

Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Study of Radiation Damage in Mg+-implanted GaN

Investigation on High-Energy Electron Irradiation on GaN Heterostructure by EBSD

Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation

Molecular Dynamics Study on the Mechanism of Gallium Nitride Radiation Damage by Alpha Particles

Effects of Ion Irradiation and Temperature on Mechanical Properties of GaN Single Crystals under Nanoindentation

Resonant Raman Scattering in Boron-Implanted GaN

Carrier transport and luminescence properties of n-type GaN

Mechanical Properties of GaN Single Crystals Upon C Ion Irradiation: Nanoindentation Analysis