Abstract:Anisotropic pattern transfer with low damage in compound semiconductor dry etching requires an in depth understanding of the chemical processes that occur at the plasma/semiconductor interface that promote the removal of volatile product species. In situ mass spectrometry has been used to study product evolution during high density plasma etching of GaAs in a Cl2/Ar chemistry. Through definitive surface temperature control and configuration of the mass spectrometer to sample through the substrate platen, a comprehensive picture of the etch process was obtained. Evolution of etch products of GaAs (AsClx and GaClx) was monitored as neutral flux (pressure), ion flux (microwave power) and ion energy (substrate bias) are varied to identify conditions where ion-driven surface chemistry is dominant. Observations show that fluxes of atomic chlorine neutrals and ions are required at the substrate to maximize etch product formation. These conditions are optimally met at low microwave powers (⩽300 W) and pressures (⩽1.0 mTorr) in our system. The ion energy dependence of product formation shows regions of thermal/chemical etching for energies less than 50 eV, ion-assisted chemical etching for energies between 50 and 200 eV, and sputtering for energies greater than 200 eV. Ideal processing conditions are ascertained from the trade off between maximum ion-assisted etch rate and minimal electronic damage, as measured by photoreflectance spectrometry. The effectiveness of post-etch chlorine treatments on returning of the surface Fermi level to its pre-etched value was also investigated.

Etching Damage and Its Recovery in N-Gan by Reactive Ion Etching

Effect of O2/CHF3 plasma treatment on n-type GaN grown on sapphire by MOCVD

The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma

Characteristics of N-Gan after Cl-2/Ar and Cl-2/N-2 Inductively Coupled Plasma Etching

Characteristics of N-Gan after ICP Etching

Etching Damage Analysis and Optimization of Inductively Coupled Plasma Etching of GaN

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Wet etching of GaN damaged by heavy ion irradiation

Plasma etching of III-V semiconductors and mechanism of crystalline damage

Plasma etching ofⅢ-Ⅴsemiconductors and mechanism of crystalline damage

Performance Recovery of p‐GaN Etch‐Induced Degradation via Atomic Layer Deposition In Situ N2 Plasma and Postanneal‐Assisted Passivation

Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (\({11\overline{2}2}\)) and Non-Polar (\({11\overline{2}0}\)) GaN Nanorods

Threshold Ion Energies and Cleaning of Etch Residues During Inductively Coupled Etching of NiO/Ga2O3 in BCl3

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Effect of ICP etching of p-GaN layer on the optical and electrical characteristics of GaN-based LEDs

Characteristics of Gan Thin Films by Inductively Coupled Plasma Etching with Cl-2/Bcl3 and Cl-2/Ar

Nonselective etching of GaN/AlGaN heterostructures by Cl 2 /Ar/BCl 3 inductively coupled plasmas

Surface chemistry and damage in the high density plasma etching of gallium arsenide