Abstract:This study investigates the effect of O2 plasma treatment on the physical and electrical properties of the surface region in Schottky-gate AlGaN/GaN high electron mobility transistor (HEMT). We demonstrate that O2 plasma treatment significantly reduces the gate leakage current and enhances the on/off ratio by three orders of magnitude compared to devices without treatment. The O2 plasma treatment removes organic chemical residue and forms Ga-O bonds on the AlGaN surface beneath the gate metal. X-ray photoelectron spectroscopy (XPS) results indicate that the treatment effectively forms a Ga-O compound oxide layer, which provides surface passivation. Furthermore, atomic force microscope (AFM) analysis reveals a 50% reduction in surface roughness after the O2 plasma treatment. Using O2 plasma oxidation treatment caused a shift in the threshold voltage (VTH) of Schottky-gate AlGaN/GaN HEMT. Initially measured at -5.26 V, the VTH value shifted to +0.5 V. Furthermore, we also employ TCAD simulation to assist in the process developed during the manufacturing process. It is worth noting that the drain current decreases as the Ga-O compound oxide layer increases. This is due to effectively depleted the polarization charges at the AlGaN/GaN interfaces during E-mode operation when reducing the thickness of the AlGaN layer beneath the gate metal. Our results demonstrate the importance of O2 plasma surface treatment in achieving optimal device performance. This study systematically discusses the effect of O2 plasma on AlGaN/GaN surface properties and the formation of Ga-O bonding. It offers insights into developing high-performance Schottky-gate AlGaN/GaN HEMT.

Effect of O2/CHF3 plasma treatment on n-type GaN grown on sapphire by MOCVD

Etching Damage and Its Recovery in N-Gan by Reactive Ion Etching

The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Investigating the effect of O2 plasma treatment on the operational characteristics of schottky-gate AlGaN/GaN HEMT

Effect of Oxygen Plasma Treatment on the Performance of Recessed AlGaN/GaN Schottky Barrier Diodes

Effect of Inductively Couple Plasma‐Based Oxygen Plasma Treatment on AlGaN/GaN HEMT

Characteristics of N-Gan after Cl-2/Ar and Cl-2/N-2 Inductively Coupled Plasma Etching

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Passivating and low damaging plasma etching of GaN using Cl 2 and SiCl 4 for recessed gate MOSc-HEMT devices

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture

Characteristics of GaN Thin Films by Inductively Coupled Plasma Etching with Cl2/BCl3 and Cl2/Ar

Effects of N_2 Carrier Gas Flow and System Temperature on the Quality of GaN Film

Effective Suppression of Current Collapse in AlGaN/GaN HEMT with N2O Plasma Treatment followed by High Temperature Annealing in N2 Ambience

Characteristics of N-Gan after ICP Etching

Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Enhancement of Electrical Characteristics of SnGaO Thin-Film Transistors Via Argon and Oxygen Plasma Treatment

Effect of Oxygen Plasma Treatment on AlGaN Schottky Contacts

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis