Abstract:MOSFETs using channel materials with low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime. From this viewpoint, attentions have recently been paid to III-V and Ge channels. However, one of the most critical issues for realizing Ge/III-V MOSFETs is gate insulator formation with superior MOS interface quality on Ge/III-V. In this paper, we focus on the possible solutions for gate stack technologies on Ge/III-V. As for Ge, GeO2/Ge interfaces have been regarded as promising. However, these interfaces have still employed thick GeO2 layers. Recently, we have succeeded in thin EOT gate stacks with Ge oxide interfacial layers by using ECR plasma post oxidation. The high quality Al2O3/GeOx/Ge gate stacks were fabricated by exposing the ALD Al2O3/Ge structures to ECR oxygen plasma and oxidizing the Ge surface through the very thin ALD Al2O3 layer. We present our recent results of the interface properties using this interface. As for InGaAs channels, we have also proposed a novel interfacial control technology utilizing InGaAs surface nitridation by ECR nitrogen plasma and successive post metallization annealing. This interfacial layer combined with an ECR sputtering SiO2 or an ALD Al2O3 gate insulator is shown to reduce D-it down to low order of 10(11) cm(-2)eV(-1). The physical origin of this D-it reduction and the role of the nitridation are discussed.

Passivating and low damaging plasma etching of GaN using Cl 2 and SiCl 4 for recessed gate MOSc-HEMT devices

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Mos Interface Control Technologies for Iii-V/Ge Channel Mosfets

The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma

Improved Performance of Fully-Recessed Normally-off LPCVD SiN/GaN MISFET Using N2O Plasma Pretreatment

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask

A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication

Nanoscale Ge Fin Etching Using F- and Cl-based Etchants for Ge-based Multi-Gate Devices

Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) Interface Trap State Reduction Via In-Situ N-2/H-2 RF Downstream Plasma Passivation

Nonselective Etching of GaN/AlGaN Heterostructures by Cl2/Ar/BCl3 Inductively Coupled Plasmas

Effect of O2/CHF3 plasma treatment on n-type GaN grown on sapphire by MOCVD

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si 3 N 4 As Passivation and Post Gate-Recess Channel Protection Layers

Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN

Performance Recovery of p‐GaN Etch‐Induced Degradation via Atomic Layer Deposition In Situ N2 Plasma and Postanneal‐Assisted Passivation

Normally-Off LPCVD-SiN x /GaN MIS-FET With Crystalline Oxidation Interlayer

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Silane–Ammonia Surface Passivation for Gallium Arsenide Surface-Channel N-Mosfets

Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma