Abstract:Introduction Ge is one of the most promising channel materials to further improve the performance of Si CMOS due to its high hole and electron mobility [1-3]. In order to overcome the current Si FinFET technology, 3D channel structure is mandatory for Ge MOSFETs. To fabricate Ge Fins, CF4- or SF6-based RIE etching is usually employed for Ge etching [Ref. needed]. However, both CF4 and SF6 RIE etching results in large surface roughness which strongly degrades the performance of Ge FinFETs. On the other hand, it is necessary to realize high selectivity of anisotropic etching of Ge which is important to obtain superior static electrical control of Fin channel. In this research, we developed a SF6-CF4 cyclic RIE etching method for Ge Fin formation with suppressed surface roughness. The impact of inserting SF6-O2 etching steps into CF4-O2 etching process on the surface roughness of Ge was systematically investigated, as well as the ratio of vertical etching to horizontal etching of Ge. It is found that with a time proportion of 60% for SF6-O2etching steps, a minimum RMS of 1.1 nm is obtained for Ge Fin etching. Experiments The CF4-O2 and SF6-O2 RIE cyclic etching were carried out for (100) Ge surfaces with the same pressure, plasma power and total gas flow. Different time proportions of 0%, 20%, 40%, 60%, 80% and 100%, were used for SF6-O2 etching steps during the CF4-O2etching, with a total etching time of each cycle for 20 s. The selectivity of vertical and horizontal etching of Ge was examined using SEM, and the surface roughness of Ge after etching was evaluated using AFM. Results and discussion Figure 1 shows the etching rate of CF4-O2 and SF6-O2 cyclic etching with different time proportion of SF6-O2 step. It is observed that the etching rate significantly increases with increase of SF6-O2 etching proportion, due to the high reactivity of SF6 with Ge [4]. The RMS of Ge surfaces after CF4-O2 and SF6-O2 cyclic etching for 20 s is evaluated by AFM (Figure 2). It is confirmed that large amount of surface roughness is generated for Ge surface after both CF4-O2 and SF6-O2 etching. With introducing SF6-O2 etching steps into CF4-O2 etching, the surface roughness of Ge is obviously reduced. The RMS values of Ge surface after CF4-O2 and SF6-O2 cyclic etching are summarized in Figure 3 as a function of the time proportion of SF6-O2 etching. It is found that with a time proportion of 60% for the SF6-O2 step, a minimum RMS of 1.1 nm is obtained for the Ge surface. The impact of SF6-O2 proportion to the ratio of vertical and horizontal etching for Ge is also examined, as shown in Figure 3. It is found that the selectivity of vertical etching decreases with increasing the SF6-O2 proportion. However, a relatively high selectivity of vertical etching of over 4 is still maintained with a time proportion of 60% for SF6-O2etching, resulting in Ge Fins with superior morphology (Figure 4). Conclusion A CF4-O2 and SF6-O2 cyclic etching method is proposed for Ge Fin formation. It is found that with a time proportion of 60% for SF6-O2etching step, superior morphology is achieved for Ge Fins with sufficiently suppressed surface roughness of 1.1 nm. References [1] S. Takagi, et al. IEDM, 2003. [2] H. Shang, et al. IBM. J. Res. Dev., 2006. [3] K. C. Saraswat, et al., Microelectro. Eng., 2008. [4] A. Campo, et al. J. Vac. Sci. Technol. B, 1995.

Nanoscale Ge Fin Etching Using F- and Cl-based Etchants for Ge-based Multi-Gate Devices

Nanoscale Ge Fin Etching Using Inductively Coupled Plasma For Ge-Based Multi-Gate Devices

Reduction of Reactive-Ion Etching-Induced Ge Surface Roughness by SF 6 /CF 4 Cyclic Etching for Ge Fin Fabrication

A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

Reduction of RIE Induced Ge Surface Roughness by SF6-CF4 Cyclic Etching Method

Research on Integrated Trench Etching for Trench-Type Power MOSFET

A Comprehensive Study of NF3-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors

Finfet Gate Etch Towards 16nm Node CMOS Technology

Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

Investigation on Ge 0.8 Si 0.2 -Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice.

Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma

Fabrication and selective wet etching of Si0.2Ge0.8/Ge multilayer for Si0.2Ge0.8 channel gate-all-around MOSFETs

Reactive ion etching of Germanium using SF6/CHF3/He gas mixture

Passivating and low damaging plasma etching of GaN using Cl 2 and SiCl 4 for recessed gate MOSc-HEMT devices

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Dry Etching Characteristics of Algan/Gan Heterostructures Using Inductively Coupled H-2/Cl-2, Ar/Cl-2 and Bcl3/Cl-2 Plasmas

Mos Interface Control Technologies for Iii-V/Ge Channel Mosfets

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids

Selective Digital Etching of Silicon–Germanium Using Nitric and Hydrofluoric Acids

Demystifying metal-assisted chemical etching of GaN and related heterojunctions