Abstract:In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized The influences of the low-temperature (LT) nucleation layer growth time, WM precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, WEI precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from threedimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 um at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

Effects of N_2 Carrier Gas Flow and System Temperature on the Quality of GaN Film

Influence of Carrier Gas Flow Rate on the Optical Properties of GaN Films Grown by HVPE

Effects of Growth Temperature Modulated by HCl Flow Rate on the Surface and Crystal Qualities of Thick GaN by HVPE

Influence of N2H2 carrier gas ratio on the properties of undoped GaN material

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Hydrogen induced changes on hydride vapor phase epitaxy of GaN growth

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Modulation Effects of Hydrogen on Structure and Photoluminescence of GaN Nanowires Prepared by Plasma-Enhanced Chemical Vapor Deposition

The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

Properties of GaN film grown by hydride vapor phase epitaxy

The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

Dependence of Gan Film Sheet Resistance on the N-2 Carrier Gas Percentage

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Role of nitrogen source flow on the growth of 2D GaN crystals

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Plasma Assisted Molecular Beam Epitaxial Growth of GaN with Low Growth Rates and Their Properties

Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth

New Design of Nozzle Structures and Its Effect on the Surface and Crystal Qualities of Thick GaN Using a Horizontal HVPE Reactor

Effect of Additional HCl on the Surface Morphology of High Quality GaN on Sapphire by HVPE

Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure