Abstract:We report on the structural, electrical, and optical characterization of GaN epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on SiNx and TiNx porous templates in order to reduce the density of extended defects. Observations by transmission electron microscopy (TEM) indicate an order of magnitude reduction in the dislocation density in GaN layers grown on TiNx and SiNx networks (down to similar to 10(8) cm(-2)) compared with the control GaN layers. Both SiNx and TiNx porous network structures are found to be effective in blocking the threading dislocation from penetrating into the upper layer. Supporting these findings are the results from X-Ray diffraction and low temperature photoluminescence (PL) measurements. The linewidth of the asymmetric X-Ray diffraction (XRD) (10 (1) under bar2) peak decreases considerably for the layers grown with the use of SiNx and TiNx layers, which generally suggests the reduction of edge and mixed threading dislocations. In general, further improvement is observed with the addition of a second SiNx layer. The room temperature decay times obtained from biexponential fits to time-resolved photoluminescence (TRPL) data are increased with the inclusion of SiNx and TiNx layers. TRPL results suggest that primarily point-defect and impurity-related nonradiative centers are responsible for reducing the lifetime. The carrier lifetime of 1.86 ns measured for a TiNx network sample is slightly longer than that for a 200 mu m-thick high quality freestanding GaN. Results on samples grown by a new technique called crack-assisted lateral overgrowth, which combines in situ deposition of SiNx mask and conventional lateral overgrowth, are also reported.

Dependence of Gan Film Sheet Resistance on the N-2 Carrier Gas Percentage

Influence of N2H2 carrier gas ratio on the properties of undoped GaN material

Effects of N_2 Carrier Gas Flow and System Temperature on the Quality of GaN Film

Relationship of Background Carrier Concentration and Defects in GaN Grown by Metalorganic Vapor Phase Epitaxy

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Gan Grown on Ain/Sapphire Templates

Influence of Carrier Gas Flow Rate on the Optical Properties of GaN Films Grown by HVPE

Characterization of Gan Epitaxial Films Grown on Sinx and Tinx Porous Network Templates

The Dependence of Gan Growth Rate on Electron Temperature in an Ecr Plasma

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

High-Quality Gan Grown by Gas-Source Mbe

Control of Residual Carbon Concentration in GaN High Electron Mobility Transistor and Realization of High-Resistance GaN Grown by Metal-Organic Chemical Vapor Deposition

High-resistivity Nitrogen-Polar GaN for GaN/AlGaN High Electron Mobility Transistors by Metalorganic Chemical Vapor Deposition

Effects of Edge Dislocations and Intentional Si Doping on the Electron Mobility of N-Type Gan Films

High-mobility N−-Gan Drift Layer Grown on Si Substrates

Two Dimensional Electron Gas In Gan Heterojunction Field Effect Transistors Structures With Aln Spacer

Residual Donors and Compensation in Metalorganic Chemical Vapor Deposition As-Grown N-Gan

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation