Abstract:GaN-based light-emitting diodes (LEDs) have been grown on Si(111) substrates with various reactor pressures for the growth of the GaN nucleation layer (NL) using metal-organic chemical vapor deposition. The influence of the reactor pressure on the GaN NLs and the properties of GaN-based LEDs grown on Si(111) substrates is investigated in detail. It is revealed that crack-free GaN films are grown on the Si(111) substrate. As the reactor pressure for GaN NLs increases from 200 to 600 Torr, the full width at half maximum values of the X-ray diffraction rocking curves for the GaN (0002) and (1 (0) over bar 12) planes decrease from 480 to 351 arcsec, and 868 to 445 arcsec, respectively, and as a result the threading dislocation density is greatly reduced, which is confirmed via the cross-sectional transmission electron microscopy measurement. Subsequently, the relationship between bending and annihilation for dislocations, and the modes for GaN NLs are elucidated. The effect of reactor pressure for the GaN NL growth on the mode of the GaN NL is also systematically studied. Furthermore, the light output power of GaN-based LEDs with GaN NLs grown at a reactor pressure of 500 Torr is greatly improved by 73.66% in comparison to that of GaN-based LEDs with GaN NLs grown at a reactor pressure of 200 Torr. This work provides a new approach for achieving highly-efficient GaN-based LEDs on Si(111) substrates.

Realization of high-resistance GaN by controlling the annealing pressure of the nucleation layer in metal-organic chemical vapor deposition

Effects of Annealing Pressure of Nucleation Layer on High-Resistivity GaN

Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate

Control of Residual Carbon Concentration in GaN High Electron Mobility Transistor and Realization of High-Resistance GaN Grown by Metal-Organic Chemical Vapor Deposition

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

Effect of Nitrogen Pressure on the Properties of GaN Films Epitaxially Grown on AlN/Si by Pulsed Laser Deposition

High-resistance GaN Epilayers with Low Dislocation Density Via Growth Mode Modification

Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth

The Surface Morphology Evolution of GaN Nucleation Layer during Annealing and Its Influence on the Crystal Quality of GaN Films

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

Unintentionally Doped Semi-Insulating GaN with a Low Dislocation Density Grown by Metalorganic Chemical Vapor Deposition

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

The Influence of Reactor Pressure on Qualities of Gan Layers Grown by Hydride Vapor Phase Epitaxy

The Effects of Sapphire Nitridation on GaN Growth by Metalorganic Chemical Vapour Deposition

High-resistivity Nitrogen-Polar GaN for GaN/AlGaN High Electron Mobility Transistors by Metalorganic Chemical Vapor Deposition

High‐Temperature Annealing of AlGaN