Abstract:In this study, the contact characteristics of p-GaN treated by laser-assisted annealing with different laser fluences were investigated. Based on the two-photon absorption model, a laser treatment on the p-GaN was achieved by utilizing laser with a wavelength of 532 nm. The results showed that specific contact resistance decreased as the laser fluence increased in the low fluence region (<200 mJ/cm2), but deteriorated when the fluence reached to 300 mJ/cm2 or even higher, indicating that laser annealing by 532 nm could greatly affect specific contact resistance. The results of SIMS, photoluminescence spectra, and XPS measurements showed that the enhanced ohmic contact for samples with a low laser injection fluence was attributed to the enhanced aggregation of Mg atoms near the surface and the enhanced activation efficiency of MgGa acceptors by the removal of H atoms from Mg–H complexes. For the samples treated with fluence higher than 300 mJ/cm2, the contact characteristics were compromised due to both the accumulation of gallium oxide on the surface which increased the barrier height of metal/GaN and the formation of structural defects. An improved ohmic contact with a specific contact resistance of 2.93 × 10−4 Ω cm2 were demonstrated for p-GaN with the 200 mJ/cm2 laser fluence. 532 nm laser-assisted annealing treatment has great potential for the selective activation of p-GaN and enhancement of GaN/metal contact characteristics.

Effects of Annealing Pressure of Nucleation Layer on High-Resistivity GaN

Realization of high-resistance GaN by controlling the annealing pressure of the nucleation layer in metal-organic chemical vapor deposition

Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Effect of Nitrogen Pressure on the Properties of GaN Films Epitaxially Grown on AlN/Si by Pulsed Laser Deposition

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Effect of Annealing on Thermal Expansion Behavior of Free-Standing GaN

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient

The Influence of Reactor Pressure on Qualities of Gan Layers Grown by Hydride Vapor Phase Epitaxy

Effects of in situ Annealing on Optical and Structural Properties of GaN Epilayers Grown by HVPE

Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Effect of Reactor Pressure on Qualities of Gan Layers Grown by Hydride Vapour Phase Epitaxy

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD

Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth

Effects of 532 nm laser-assisted annealing on metal contact to p-GaN

Effects of Rapid Thermal Annealing on the Structural Properties of GaN Thin Films

The Surface Morphology Evolution of GaN Nucleation Layer during Annealing and Its Influence on the Crystal Quality of GaN Films