Abstract:Annealing Mg-implanted homoepitaxial GaN at temperatures above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects, in the form of inversion domains, contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. Triple-axis x-ray data reveal that implant-induced strain is fully relieved after annealing at 1300 °C for 10 min, indicating that strain-inducing point defects formed during implantation have reconfigured and inversion domains are formed. However, annealing at temperatures of 1400–1500 °C (one GPa N2 overpressure) eliminates the presence of the inversion domains. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop density is observed after annealing at the higher temperatures and longer times. Additionally, once inversion domains are formed and the samples are cooled to room temperature, they are shown to dissolve with subsequent annealing above 1400 °C. While such defects have been observed before, the important finding that such defects can be dissolved with a short, higher temperature step is key. Earlier work [Breckenridge et al., J. Appl. Phys. Lett. 118, 022101 (2021)] addressing electrical measurements of these types of samples showed that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements earlier work by identifying the inversion domains, which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (>1400 °C) annealing cycles to activate Mg in GaN, even if the Mg-containing inversion domains had been formed during lower temperature annealing.

Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

High Pressure Processing of Ion Implanted GaN

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

ChemInform Abstract: GaN Crystals Prepared Through Solid‐State Metathesis Reaction from NaGaO2 and BN under High Pressure and High Temperature.

Effects of Annealing Pressure of Nucleation Layer on High-Resistivity GaN

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

Effects of low-temperature annealing on net doping profile of Mg-ion-implanted GaN studied by MOS capacitance–voltage measurement

Research on Evolution of Relevant Defects in Heavily Mg-Doped GaN by H Ion Implantation Followed by Thermal Annealing

Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Detail Study on Lattice Deformation and Recovery of GaN by Mg-ion-implantation and the Subsequent Thermal Annealing

Realization of high-resistance GaN by controlling the annealing pressure of the nucleation layer in metal-organic chemical vapor deposition

Effect of High Temperature–pressure on Nitrogen-Doped Czochralski Silicon

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment