Abstract:Undoped and Si-doped GaN films were grown epitaxially on sapphire by reactive rf sputtering of GaAs (and Si) in Ar-N2 mixture. The resistivity of undoped GaN film grown at 100% N2 was ~2 x 105 {\Omega} cm, which reduced to ~1 {\Omega} cm in Si-doped film, revealing the effect of Si doping. With decrease of N2 from 100% to 75%, the carrier concentration of Si-doped films increased from ~7 x 1018 cm-3 to ~2 x 1019 cm-3, but remained practically unchanged as N2 was decreased to 20%, which is explained by effects due to saturation of Si doping and increase of Ga interstitials as well as compensation by N interstitials and Ga vacancies. Undoped and Si-doped films grown below 20% N2 displayed similar carrier concentrations (~1020 cm-3), due to dominance of Ga interstitials. Both undoped and Si-doped films were degenerate and displayed increase of mobility with carrier concentration and temperature, which was analyzed by the combined effect of ionized impurity and dislocation scattering, using compensation ratio as fitting parameter. At carrier concentrations below 1019 cm-3, the mobility was governed by both ionized impurity and dislocation scattering, while at higher carrier concentrations, ionized impurity scattering was found to dominate, limited by compensation due to acceptors. In spite of the degenerate character, the films displayed a small decrease of carrier concentration with temperature, along with a nearly linear decrease of mobility, which are explained by a marginal increase of compensation ratio with decrease of temperature, taking into account the band edge fluctuation effects.

Influence of N2H2 carrier gas ratio on the properties of undoped GaN material

Effects of N_2 Carrier Gas Flow and System Temperature on the Quality of GaN Film

Influence of Carrier Gas Flow Rate on the Optical Properties of GaN Films Grown by HVPE

Dependence of Gan Film Sheet Resistance on the N-2 Carrier Gas Percentage

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Effect of In-Situ SiNx Grown with Different Carrier Gas on Structural and Electrical Properties of GaN-based MISHEMTs

The Influence of V/III Ratio in the Initial Growth Stage on the Properties of GaN Epilayer Deposited on Low Temperature AlN Buffer Layer

Hydrogen induced changes on hydride vapor phase epitaxy of GaN growth

The Influence of 1nm AlN Interlayer on Properties of the Al0.3Ga0.7N/AlN/GaN HEMT Structure

Carrier transport and luminescence properties of n-type GaN

Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar α-plane GaN films

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

The Depth-Profiled Carrier Concentration and Scattering Mechanism in Undoped GaN Film Grown on Sapphire

Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy

Relationship of Background Carrier Concentration and Defects in GaN Grown by Metalorganic Vapor Phase Epitaxy

HVPE growth of bulk GaN with high conductivity for vertical devices

Influence of Polarities of GaN Substrates on Surface Morphologies and Physical Properties of Epitaxial Mg‐Doped GaN Films Grown by MOCVD

The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

Influence of Carrier Gas on Microstructures and Morphologies of Cu(In_(1-x)Ga_x)Se_2 Films

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition Method