Abstract:In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized The influences of the low-temperature (LT) nucleation layer growth time, WM precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, WEI precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from threedimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 um at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

Relationship of Background Carrier Concentration and Defects in GaN Grown by Metalorganic Vapor Phase Epitaxy

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Dependence of Gan Film Sheet Resistance on the N-2 Carrier Gas Percentage

The Depth-Profiled Carrier Concentration and Scattering Mechanism in Undoped GaN Film Grown on Sapphire

Defect Evolution and Accompanied Change of Electrical Properties During the GaN Growth by Metalorganic Chemical Vapor Deposition

Effects of N_2 Carrier Gas Flow and System Temperature on the Quality of GaN Film

Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition

Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide (ga 2 O 3 ) Powder Source

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Crystallization behavior and defect analysis on induction growth of hexagonal GaN in isothermal relaxation

Growth Behavior and Stress Distribution of Bulk GaN Grown by Na-flux with HVPE GaN Seed under Near-Thermodynamic Equilibrium

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Raman Scattering and X-Ray Diffraction Study of Neutron Irradiated GaN Epilayers

Influence of N2H2 carrier gas ratio on the properties of undoped GaN material

Investigation of Oxygen Impurity in Different Growth Zones of GaN Crystal Grown by Na-flux Method

The electrical properties of bulk GaN crystals grown by HVPE

Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy