Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

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First principles study on the thermoelectric properties of GaN nanowires with C N point defects

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Using neural network potential to study point defect properties in multiple charge states of GaN with nitrogen vacancy

Optoelectronic properties exploration of native point defects on GaN nanowires

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Complex defects in Al0.5Ga0.5N by first principles calculations

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Influence of Point Defects on Optical Properties of GaN-based Materials by First Principle Study

Electron Energy Loss Spectroscopy and First-Principles Study of GaN Via Zn Doping

Ab Initio Calculations of Structural and Energetic Properties of Defects in Gallium Nitride

Investigation of native defects and impurities in X-N (X = Al, Ga, In)

Electronic Properties and Passivation Mechanism of AlGaN/GaN Heterojunction with Vacancies: a DFT Study

Effect of lattice defects on the property of GaN crystal: A molecular dynamics simulation study

Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations

Defects In Gallium Nitride Nanowires: First Principles Calculations

Electronic Structures and Magnetic Properties of GaN Sheets and Nanoribbons

First-principles Study of CN Point Defects on Sidewall Surface of [0 0 0 1]-Oriented GaN Nanowires

Analysis of radiation defects in gallium nitride using deep level transient spectra and first principles methods

Electronic Structures of Wurtzite Gan with Ga and N Vacancies

A combined AIMD and DFT study of the low-energy radiation responses of GaN