Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Effects Of Point Defects On Thermal And Thermoelectric Properties Of Inn

Native Defects in InxGa1−xN Alloys

Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

Effects of Dislocations on Electron Transport in Wurtzite InN

Enhanced Thermoelectric Performance of In2O3-based Ceramics Via Nanostructuring and Point Defect Engineering.

Effects of Heavy Ion Irradiation on the Thermoelectric Properties of In2(Te1−xSex)3 Thin Films

Temperature Effects on Optical Properties of InN Thin Films

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Defect Evolution Induced by Low-Dose Neutron Irradiation and Elastoplastic Deformation Mechanism of Indium-Doped GaN Materials

ELECTRICAL PROPERTIES OF SEMICONDUCTOR InN

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Study on the effect of sputtering pressure on the physical properties of InN films on ITO substrate and the dependence of carrier transport characteristics of Li-doped p-NiO/n-InN heterojunction on the environmental temperature

Investigation on the Structural Origin of N-Type Conductivity in Inn Films

Low-dose Neutron Irradiation Effects on the Elastoplastic Deformation Mechanisms of Aluminum-Doped Gallium Nitride under Contact Loading

Au ion irradiation induces ultralow thermal conductivity in GaN

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Direct Observation of Defect Range and Evolution in Ion-Irradiated Single Crystalline Ni and Ni Binary Alloys

Effects of Temperature on the Irradiation Responses of Al 0.1 CoCrFeNi High Entropy Alloy

Carrier Recombination, Relaxation, and Transport Dynamics in InN