Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Runjie Lily Xu,Miguel Muñoz Rojo,S. M. Islam,Aditya Sood,Bozo Vareskic,Ankita Katre,Natalio Mingo,Kenneth E. Goodson,Huili Grace Xing,Debdeep Jena,Eric Pop
DOI: https://doi.org/10.1063/1.5097172
IF: 2.877
2019-11-14
Journal of Applied Physics
Abstract:Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here, we measure the thermal conductivity of crystalline AlN by the 3<i>ω</i> method, finding that it ranges from 674 ± 56 Wm<sup>−1</sup> K<sup>−1</sup> at 100 K to 186 ± 7Wm<sup>−1</sup> K<sup>−1</sup> at 400 K, with a value of 237 ± 6 Wm<sup>−1</sup> K<sup>−1</sup> at room temperature. We compare these data with analytical models and first-principles calculations, taking into account atomic-scale defects (O, Si, C impurities, and Al vacancies). We find that Al vacancies play the greatest role in reducing thermal conductivity because of the largest mass-difference scattering. Modeling also reveals that 10% of heat conduction is contributed by phonons with long mean free paths (MFPs), over ∼7 <i>μ</i>m at room temperature, and 50% by phonons with MFPs over ∼0.3 <i>μ</i>m. Consequently, the effective thermal conductivity of AlN is strongly reduced in submicrometer thin films or devices due to phonon-boundary scattering.
physics, applied
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