Abstract:Semipolar III-nitrides have attracted great attention due to their weak polarization field for optoelectronic devices. High-quality AlN is a perfect template in the epitaxial growth of AlGaN-based ultraviolet optical devices. In this work, (112̅2) semipolar AlN was grown on m-plane sapphire by the hierarchical growth mode. A high density of extended defects due to the lattice mismatch and anisotropic growth rate is identified in the as-grown AlN thin film. The influence of thermal annealing and AlN regrowth on the evolution of stacking faults and dislocations in AlN was thoroughly investigated by high-resolution transmission electron microscopy. Extending defects turned into partial dislocations after high-temperature treatment, by which the stacking faults were buried inside the AlN template, incapable of propagating into the AlN regrowth layer. As a result, the AlN regrowth layer exhibits superior crystalline quality. However, compressive strain is found after high-temperature annealing (HTA), which introduces new defects in the AlN regrowth layer. Strain management is demonstrated to be crucial for the quality control of the AlN layer. Overall, high-temperature annealing and regrowth processes proved to be stable and repeatable techniques in the realization of high-efficiency semipolar UV semiconductor devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.cgd.1c00086?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.cgd.1c00086</a>.In-plane crystallographic relationship and RSM of AlN and sapphire; HRTEM and IFFT analysis of defect-free AlN regions; and summarized lattice distance and strain at each processing stage (<a class="ext-link" href="/doi/suppl/10.1021/acs.cgd.1c00086/suppl_file/cg1c00086_si_001.pdf">PDF</a>).This article has not yet been cited by other publications.

First-principle study on the effect of point defects on the mechanical properties, thermal conductivity, and optical properties of wurtzite AlN

First-Principle Calculations of Elastic Properties of Wurtzite-Type Aluminum Nitride under Pressure

First-principles Study of Size Effects on Electrical Properties of AlN/GaN Heterostructured Nanofilms

First-principles study of the effect of alkaline earth metal doping on the magnetic and photocatalytic properties of monolayer AlN: V N -H i

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Cathodoluminescence studies of point defects in aluminum nitride

Optical property in colorless AlN bulk crystals: investigation of native defect-induced UV absorption

Complex defects in Al0.5Ga0.5N by first principles calculations

The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing

First-Principles Study of Electronic Structure and Optical Properties of La-Doped AlN

First Principles Study of Aluminium Vacancy in Wurtzite Aluminium Nitride

First principles study on the thermoelectric properties of GaN nanowires with C N point defects

Electronic Structure and Optical Properties of YAlN: A First‐Principles Study

Tuning the electronic and optical properties of two-dimensional GaN/AlGaN heterostructure by vacancy defect

Study on the uniaxial tensile mechanical behavior of two-dimensional single-crystal aluminum nitride

Annihilation and Regeneration of Defects in (112̅2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth

Investigation of native defects and impurities in X-N (X = Al, Ga, In)

Thermal Transport at the AlN-SiC Interface and Grain Boundary of AlN

First-Principles Study on the Effect of Impurities at the Front of Cracks in Alpha-Fe

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

Atomic understanding of elastic-plastic deformation and crack evolution for single crystal AlN during nanoscratch