Abstract:Transmission and reflection measurements have been carried out on AlInN thin films. With the aid of a detailed procedure developed for analyzing the spectra, we obtained the effects of temperature on the optical properties of AlInN, such as the absorption coefficient, band-gap, Urbach bandtail characteristics, and refractive index. The absorption coefficient of the complete Urbach and intrinsic absorption regions of InN thin films has been described by a series of empirical formulas. The refractive index dispersion of AlN thin films below the band gap can be described by the Sellmeier equation. A bandtail model based on the calculation of density of occupied states and the carrier - phonon interaction has been employed to analyze the bandtail characteristics of AlInN thin films. We have also investigated Raman spectroscopy of AlInN thin films, with the emphasis on temperature dependence of phonon frequencies, which can be described well by a model taking into account the contributions of the thermal expansion of the crystal lattice, the strain between AlInN thin films and sapphire substrates, as well as three-and four-phonon coupling. These optical properties provide an experimental basis for further theoretical investigation and the design of AlInN-based devices.

Optical property in colorless AlN bulk crystals: investigation of native defect-induced UV absorption

On the Origin of the 265 Nm Absorption Band in AlN Bulk Crystals

Ultraviolet Optical Properties Analysis of Wurtzite AlN Films Grown by Vapor Phase Epitaxy

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Cathodoluminescence studies of point defects in aluminum nitride

Photochromism and influence of point defect charge states on optical absorption in aluminum nitride (AlN)

The Role of the Carbon-Silicon Complex in Eliminating Deep Ultraviolet Absorption in Aln

The influence of defects and impurities in polycrystalline AlN films on the violet and blue photoluminescence

Temperature Dependence of the Optical Properties in Hexagonal AlN

Effect of Impurities on Raman and Photoluminescence Spectra of AlN Bulk Crystals

First-principle study on the effect of point defects on the mechanical properties, thermal conductivity, and optical properties of wurtzite AlN

Critical Point Transitions of Wurtzite AlN in the Vacuum–ultraviolet Spectral Range

Vacancy Compensation and Related Donor-Acceptor Pair Recombination in Bulk AlN

Optical Properties of AlInN Thin Films

Origin of a Wide and Asymmetric Blue Luminescence Band in AlN Nanowires: VN, VAl, ON, and 3on–val Surface Defects

Cathodoluminescence investigation of defect states in n- and p-type AlN

Deep‐ultraviolet luminescence properties of AlN

Characterizations of Two-photon Absorption Process Induced by Defects in Aluminum Nitride Using Z-scan Method

Temperature-Dependent Raman Scattering and Correlative Investigation of AlN Crystals Prepared Using a Physical Vapor Transport (PVT) Method

First Principle Study of the Native Defects in Hexagonal Aluminum Nitride

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects