Abstract:This dissertation presents a serial study on optical properties of different semiconductor materials. Three main types of studies are addressed: The role of doping levels of N and Al atoms in the room-temperature photoluminescence (PL) of 4H-SiC films for optoelectronic applications; the use of a basic Monte Carlo method combined with probability calculations of the time-dependent Schroedinger equation to manifest multi-photon absorption and emission of II-VI compound quantum dots (QDs) for bioimaging; a theoretical quantum chemistry approach to study of structure and optical properties of InGaAsN and GaAs clusters for laser technology applications. 4H-SiC films were grown on AlN/SiC(100) substrates by a chemical vapour deposition (CVD) system. Three well-defined room-temperature PL peaks close to the band-gap energy were observed. By a detailed theoretical analysis of optical transitions in the samples, it was found that the PL peaks are most probably due to the optical transitions between impurity levels and band edges, and the transition between the second minimum of the conduction band and the top of the valance band. Special attention has been paid to effects of doping levels of N and Al impurities. Optical transitions in several II-VI semiconductor QDs have been studied by a quantum Monte Carlo method. We model the QD energy band structure by a spherical square quantum well and the electrons in the conduction band and holes in the valence band by the effective mass approximation. The optical probabilities of optical transitions induced by ultrafast and ultraintense laser pulses are calculated from the time-dependent Schroedinger equation. With the inclusion of the nonradiative electron-phonon processes, the calculated absorption and emission spectra are in agreement with experimental work. The dynamic processes and up-conversion luminescence of the QDs, required for many applications including bio-imaging, are demonstrated. Quantum chemistry is used to study InGaAsN and GaAs nano systems. The molecular structures of a series of dilute-nitride zinc blende InGaNAs clusters are examined from the energy point of view with a semi-empirical method. The optimum cluster configurations are identified by which we can identify the detailed bonding structures and the effects of In mole fraction. After proper geometry construction, an effective central insertion scheme has been implemented to study the electronic band structures of GaAs at the first-principles level. The formation of energy bands and quantum confinement effects have been revealed, thus providing theoretical support for laser design.

Deciphering the photophysical properties of near-infrared quantum emitters in AlGaN films by transition dynamics

Bright room temperature near-infrared single-photon emission from single point defects in the AlGaN film

Single-Photon Emission from Point Defects in Aluminum Nitride Films

Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation

Quantum Emitters in Aluminum Nitride Induced by Zirconium Ion Implantation

Carbon and Silicon Impurity Defects in GaN: Simulating Single-Photon Emitters by First Principles

Quantum Emitters with Narrow Band and High Debye-Waller Factor in Aluminum Nitride Written by Femtosecond Laser

Nonradiative Dynamics Induced by Vacancies in Wide-Gap III-Nitrides: Ab Initio Time-Domain Analysis

Optical Dipole Structure and Orientation of GaN Defect Single-Photon Emitters

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

GaN as a Material Platform for Single‐Photon Emitters: Insights from Ab Initio Study

Photo-dynamics of quantum emitters in aluminum nitride

Point Defects in Monolayer h -AlN as Candidates for Single-Photon Emission

Influence of Point Defects on Optical Properties of GaN-based Materials by First Principle Study

Quantum efficiency of III-Nitride emitters: evidence for defect-assisted non-radiative recombination and its effect on the green gap

First‐Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: the Example of Yellow Luminance by GaN: CN+ON and GaN:CN

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

Cathodoluminescence studies of point defects in aluminum nitride

Quantum Chemistry Study of Energy Band Structures of GaAs Nano Clusters

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing