Abstract:The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work, to investigate the influence of thickness on the quality of the AlN epilayer, two AlN-thick epi-film samples were grown on c-plane sapphire substrates. The optical and structural characteristics of AlN films are meticulously examined by using high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), a dual-beam ultraviolet-visible spectrophotometer, and spectroscopic ellipsometry (SE). It has been found that the quality of AlN can be controlled by adjusting the AlN film thickness. The phenomenon, in which the thicker AlNn film exhibits lower dislocations than the thinner one, demonstrates that thick AlN epitaxial samples can work as a strain relief layer and, in the meantime, help significantly bend the dislocations and decrease total dislocation density with the thicker epi-film. The Urbach's binding energy and optical bandgap (Eg) derived by optical transmission (OT) and SE depend on crystallite size, crystalline alignment, and film thickness, which are in good agreement with XRD and SEM results. It is concluded that under the treatment of thickening film, the essence of crystal quality is improved. The bandgap energies of AlN samples obtained from SE possess larger values and higher accuracy than those extracted from OT. The Bose–Einstein relation is used to demonstrate the bandgap variation with temperature, and it is indicated that the thermal stability of bandgap energy can be improved with an increase in film thickness. It is revealed that when the thickness increases to micrometer order, the thickness has little effect on the change of Eg with temperature.

The impact of film thickness and substrate surface roughness on the thermal resistance of aluminum nitride nucleation layers

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Thermal Transport at the AlN-SiC Interface and Grain Boundary of AlN

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature

Enhanced Thermal Conductivity Of Polycrystalline Aluminum Nitride Thin Films By Optimizing The Interface Structure

AlN: An Engineered Thermal Material for 3D Integrated Circuits

High Thermal Conductivity of Submicrometer Aluminum Nitride Thin Films Sputter-Deposited at Low Temperature

Tunable thermal conductivity of thin films of polycrystalline AlN by structural inhomogeneity and interfacial oxidation

Growth-microstructure-thermal property relations in AlN thin films

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

The Effect of Al Interlayers on the Growth of AlN on Si Substrates by Metal Organic Chemical Vapor Deposition

Thick adherent diamond films on AlN with low thermal barrier resistance

Effect of Al Substrate Nitridation on the Properties of AlN Films Grown by Pulsed Laser Deposition and Its Mechanism

Effect of Substrate Type on the Lattice Structure of AlN Thin Films Annealed at High Temperature

The effect of N+-implanted aluminum substrate on the mechanical properties of TiN films

Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

Effects of Aln Nucleation Layer Thickness on Crystal Quality of Aln Grown by Plasma-Assisted Molecular Beam Epitaxy