Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Native Defects in InxGa1−xN Alloys

Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

Fermi-level Stabilization Energy in Group III Nitrides

Photoluminescence of Energetic Particle-Irradiated Inxga1-Xn Alloys

Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

Donor and Acceptor Characteristics of Native Point Defects in GaN

Vacancy-type Defects in InxGa1–xN Alloys Probed Using a Monoenergetic Positron Beam

Surface Electronic Properties of N‐ and P‐type InGaN Alloys

Defect Evolution Induced by Low-Dose Neutron Irradiation and Elastoplastic Deformation Mechanism of Indium-Doped GaN Materials

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Native defects in gallium nitride

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Investigation of native defects and impurities in X-N (X = Al, Ga, In)

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Effects Of Point Defects On Thermal And Thermoelectric Properties Of Inn

Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials

Optoelectronic properties exploration of native point defects on GaN nanowires

Radiation-induced defects in the InGaN/GaN superlattice structure

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Group III-nitride Alloys As Photovoltaic Materials

First Principle Study of the Native Defects in Hexagonal Aluminum Nitride