Abstract:The photoluminescence (PL) and photoluminescence excitation spectra (PLE) of selected InxGa1-xN samples grown by metal organic chemical vapor deposition (MOCVD) have been investigated, and the analysis of structural and optical behaviors has been taken to study the existence of the microstructure InGaN alloys on the basis of X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements.XRD reveals that the sample is a single crystalline InxGa1-xN film formed predominantly in (0002) direction, the In mole composition x in InxGa1-xN film is calculated to be about 0.2 according to the Bragg's angle of InxGa1-xN (0002). The AFM plane-view and 3D images of the selected In0.2Ga0.8N sample show almost uniform island-like microstructure appearing to be composed of granular-crystalline in nanometer scale. The islands composed of the grapes-like have an average height of 10 nm at most and a mean size of 300 nm. The self-organized microstructure appeared to form cone and/or pyramid shape and tended to agglomerate island-like surface with RMS roughness about 10 nm, which attributed to Stranski-Krastanov growth mechanism. The comparison between PLE and PL under different exciting or monitoring energy allows determining the existence of wetting layer (WL)in the sample. The PLE and PL measurements show that the resonant absorption is related to the band gap and wetting layer of the alloy at different exciting and monitoring energy. It has been found that PLE peaks of the In0.2Ga0.8N alloy are dominated by 365 nm and 474 nm with monitoring wavelength 545 nm and 493 nm; the broad 545 nm and narrow 493 nm emission peaks are originated from In(Ga)N wetting layer and InGaN region respectively. The structural and optical analyses suggest that the origin of the exciton localization center is the self-formed islands. Hence, the irrelevancy of the PL spectra to the gap energy was explained in terms of fluctuation resulting from variations in grain size or shape. This type of localized center provides another physical model for the proposed localized states in InxGa1-xN epilayers. Further characterization of the InGaN systems is underway to help fully understand the correlation between the structural and the optical pro-perties of self-organized micro-structure of InGaN system.

Vacancy-type Defects in InxGa1–xN Alloys Probed Using a Monoenergetic Positron Beam

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Positron Annihilation in (ga, Mn)N: A Study of Vacancy-Type Defects

Native Defects in InxGa1−xN Alloys

The Origin and Evolution of V-defects in InxAl1−xN Epilayers Grown by Metalorganic Chemical Vapor Deposition

Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN

Nonradiative Dynamics Induced by Vacancies in Wide-Gap III-Nitrides: Ab Initio Time-Domain Analysis

Native defects in gallium nitride

Donor and Acceptor Characteristics of Native Point Defects in GaN

Enhanced Damage Buildup in C+-implanted GaN Film Studied by a Monoenergetic Positron Beam

Alloy Composition Fluctuation And Band Edge Energy Structure Of In-Rich Inxga1-Xn Layers Investigated By Systematic Spectroscopy

First principle study of nitrogen vacancy in aluminium nitride

Photoluminescence Spectroscopy Of Nearly Defect-Free Inn Microcrystals Exhibiting Nondegenerate Semiconductor Behaviors

Using ground state and excited state density functional theory to decipher 3 d dopant defects in GaN

Investigation on Optical and Micro-structural Properties of Inx Ga1-x N Alloys Grown by MOCVD

Emission from Defects in Thin Gan Epilayers Grown on Vicinal 4H-Sic Substrates

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Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

Oxygen Defect Dominated Photoluminescence Emission of ScxAl1−xN Grown by Molecular Beam Epitaxy

Electronic Structures of N-doped Graphene with Native Point Defects