Abstract:One of the most interesting wide-bandgap semiconductor is 4H-SiC that has an indirect wide-bandgap of 3.3 eV. This material holds great potential to develop power devices that find applications in the field of high-voltage and high-temperature electronics and harsh environments. In this study, we employed complementary noninvasive characterization techniques, including micro-Raman, optical absorption, steady-state, and time-resolved photoluminescence spectroscopy, to investigate the characteristics of a 12 μm thick epitaxial layer of 4H-SiC grown on 4H-SiC. Furthermore, we explored the impact of ionizing radiation on this material, utilizing β-rays and two x-ray sources. The doses are in the range of 1–100 kGy for electrons with energy of 2.5 MeV, 16 kGy for the first x-ray source (an x-ray tube with a W target operating at an anode bias voltage of 28 kV), and 100 kGy for the second x-ray source (an x-ray tube with a W target operating at an anode bias voltage of 100 kV). When exposed to the electron beam, the excitonic band at 3.2 eV exhibits a reduction in its lifetime as the deposited dose increases. In particular, in samples characterized by a greater amount of native defects, both extended and point defects, this effect becomes evident at lower deposited doses. Conversely, in the samples subjected to x-ray irradiation, these effects are not observed. These findings indicate that electron beam irradiation triggers the formation of defects associated with atomic displacement. Ultimately, we have examined the impact of thermal treatments in air, ranging from 100 to 900 °C, to investigate the recovery characteristics of 4H-SiC.

Impact of electron irradiation on semi-insulating and conductive β-Ga 2 O 3 single crystals

Modification of β-gallium oxide electronic properties by irradiation with high-energy electrons

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure

Unraveling optical degradation mechanism of β -Ga2O3 by Si4+ irradiation: A combined experimental and first-principles study

Structural and Luminescent Properties of Electron-Irradiated Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

High-energy X-Ray Radiation Effects on the Exfoliated Quasi-Two-dimensional Β-Ga2o3 Nanoflake Field-Effect Transistors

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga2O3

Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO2 Film/p-Si Structures

Structural and electronic characteristics of Fe-doped β-Ga2O3 single crystals and the annealing effects

Influence of gamma-irradiation sterilization on the structural defects of sapphire single crystals (alpha-Al(2)O(3))

Orientation-dependent surface radiation damage in $β$-Ga2O3 explored by multiscale atomic simulations

Gamma-Ray Irradiation Effects On Electroluminescence From Au Extra Thin Si-Rich Sio2 Film/P-Si Structures

Investigation on High-Energy Electron Irradiation on GaN Heterostructure by EBSD

Temperature dependence of optical centers in 200 keV electron irradiated β-Ga2O3

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

Ti3SiC2 irradiation damage at electron beam energy levels of 120 keV and 200 keV

Defect energy levels in monoclinic β-Ga2O3

β -rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination