Abstract:When an insulating material is subjected to electron irradiation, it produces a secondary emission the yield of which varies from a few percent to very high values (up to 24 per incoming electron) depending on the material and the experimental conditions. If the secondary electron emission yield is less than one, a net negative charge remains trapped in the sample. In this case, the study of the electric charges trapping properties of the material becomes possible. This article describes how it is possible to use a secondary electron microscope (SEM) as a device to perform such a study. In Sec. II, the effect of a net negative trapped charge resulting (from the injection of typically 50 pC) on the imaging process of the SEM has been described. It has been shown that when the trapped charge is high enough, it acts as a mirror reflecting the incoming electron beam which is deflected somewhere in the vacuum chamber of the microscope. A global qualitative description of the image displayed on the screen is first presented. Then electron trajectories are quantitatively studied by using the Rutherford scattering cross section in the case of a point charge. When the charge is extended, a numeric simulation has been done in order to predict the validity range of the previous model. Once the trajectories have been calculated, the connection between the remarkable elements of the image and the quantity of trapped charges has been established. Moreover, this technique allows one to study the lateral dimension of the trapped charge zone and to measure the surface potential. In Sec. III, the discussion is first focused on some precautions to be taken concerning the sample preparation before the experiment is performed. It has been shown that surface defects due either to contamination layers or machining change the trapping properties of single-crystals ceramics such as MgO and Al2O3. A cleaning procedure is proposed that consists of annealing the sample at 1500 °C for 4 h in order to heal the crystalline defects and a heating at 400 °C in the vacuum chamber of the SEM to remove the contamination layers. Finally, the effect of the temperature on the trapping properties of pure and chromium doped sapphire has been studied in relation with the chromium concentration. It is shown that temperature behavior of trapping is in relation with the chromium concentration. In the pure sapphire trapping is activated below −16 °C, in 500 ppm rubis it is below −9.5 °C due to isolated chromium atoms, and in the 8000 ppm rubis the critical trapping temperature rises to 3.7 °C due to Cr3+ pairs. The interpretation of the role played by chromium on trapping is based on the experimental study of the fluorescence of chromium atoms and pairs as a function of concentration.

Influence of gamma-irradiation sterilization on the structural defects of sapphire single crystals (alpha-Al(2)O(3))

Irradiation Effect on Sapphire for Optical Window

Irradiation Effect of Space Particle on Sapphire Single Crystal for Optical Window Material

Irradiation Effects on the Structural and Optical Properties of Single Crystal Β-Ga2o3

Gamma‐ray irradiation effect on microstructure and physical performances of porous silica

Effects of ion irradiation and annealing on optical and structural properties of CeO2 films on sapphire

Impact of electron irradiation on semi-insulating and conductive β-Ga 2 O 3 single crystals

Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners

Study of Gamma-Ray Radiation Effects on the Passivation Properties of Atomic Layer Deposited Al2O3 on Silicon Using Deep-Level Transient Spectroscopy

Effect of high-energy radiation on the electrical and optical characteristics of bioactive glasses

Space charge measurement in a dielectric material after irradiation with a 30 kV electron beam: Application to single-crystals oxide trapping properties

Strain Development and Damage Accumulation under Ion Irradiation of Polycrystalline Ge-Sb-Te Alloys

Structural changes on the surfaces of borosilicate glasses induced by gamma‐ray irradiation

Irradiation effects on microstructure, mechanical properties, and lead-bismuth eutectic corrosion resistance of alumina coating

Gamma irradiation-induced effects on the properties of TiO2 on fluorine-doped tin oxide prepared by atomic layer deposition

Studies of chemical bonds loss and optical modifications of CR-39 caused by gamma rays

Effects of gamma irradiation on non-polar GaN films deposited on sapphire using pulsed laser deposition

Effect of γ-rays irradiation on optical and structural properties of the perovskite 128° Y-cut LiNbO3 single crystal

Effects of Annealing Treatment and Gamma Irradiation on the Absorption and Fluorescence Spectra of Cr:GSGG Laser Crystal

Modification of β-gallium oxide electronic properties by irradiation with high-energy electrons

Mechanical characteristics of sapphire before and after neutron irradiation