Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners

Wenjun Liao,En Xia Zhang,Michael L. Alles,Andrew L. Sternberg,Charles N. Arutt,Dingkang Wang,Simeng E. Zhao,Pan Wang,Michael W. McCurdy,Huikai Xie,Daniel M. Fleetwood,Robert A. Reed,Ronald D. Schrimpf
DOI: https://doi.org/10.1109/tns.2018.2853139
IF: 1.703
2018-01-01
IEEE Transactions on Nuclear Science
Abstract:Total-ionizing-dose effects on electrothermal microscanners are investigated using 10-keV X-rays and 14.3-MeV oxygen ions. The corresponding changes in mechanical displacement are measured using an optical microscope. Applied dc voltage and/or radiation-induced charging lead to changes in the vertical position and resistance of the structures. Radiation-induced changes in the vertical position and resistance and postirradiation recovery or superrecovery of these quantities are sensitive to de biases applied during and/or after irradiation. Simple electrostatic and computational models are qualitatively consistent with observed trends in device response.
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