Abstract:In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor phase epitaxy (MOVPE) induced by annealing at different temperatures under O2 ambient. Annealing at successively higher temperatures decreases the overall PL yield and UV intensity at nearly the same rates, indicating the increase in formation of at least one non-radiative defect type. Simultaneously, the PL yield ratios of blue/UV and green/UV increase, suggesting that defects associated with these emissions increase in concentration with O2 annealing. Utilizing the different absorption coefficients of 240 and 266 nm polarization-dependent excitation, we find an overall activation energy for the generation of non-radiative defects of 0.69 eV in the bulk but 1.55 eV near the surface. We also deduce activation energies for the green emission-related defects of 0.60 eV near the surface and 0.89-0.92 eV through the films, whereas the blue-related defects have activation energy in the range 0.43-0.62 eV for all depths. Lastly, we observe hillock surface morphologies and Cr diffusion from the substrate into the film for temperatures above 1050 oC. These observations are consistent with the formation and diffusion of VGa and its complexes as a dominant process during O2 annealing, but further work will be necessary to determine which defects and complexes provide radiative and non-radiative recombination channels and the detailed kinetic processes occurring at surfaces and in bulk amongst defect populations.

Temperature dependence of optical centers in 200 keV electron irradiated β-Ga2O3

Irradiation Effects on the Structural and Optical Properties of Single Crystal Β-Ga2o3

Temperature Dependence of Optical Centres in Ultrapure Diamond after 200 Kev Electron Irradiation

The Photoluminescence Properties of β-Ga2O3 Thin Films

Photoluminescence of Ga2O3 Thin Film and Characterization of Laser Ablated Species

Photoluminescence spectroscopy of Cr3+ in β-Ga2O3 and (Al0.1Ga0.9)2O3

Structural, optical and photoluminescence properties of Ga2O3 thin films deposited by vacuum thermal evaporation

Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3

Kinetics of charge carrier recombination in beta-Ga2O3 crystals

Dispersion of two-photon absorption and nonlinear refraction in β -Ga2O3 from 350 to 515 nm

Impact of electron irradiation on semi-insulating and conductive β-Ga 2 O 3 single crystals

Ultra-Wide Bandgap Gallium Oxide Films: UV-Luminescence and Phonon Dynamics at Extreme Temperatures

ESR study of temperature dependence of colour centers in γ-ray irradiated fluoride glasses

Temperature-Dependent Study of Β-Ga2o3 Solar-Blind Photodetectors

Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence

Temperature Dependence of Optical Centers in Ib Diamond Characterized by Photoluminescence Spectra

Ultraviolet photoluminescence of β-Ga2O3 microparticles synthesized by hydrothermal method

Temperature dependence of optical centers in transmission electron microscope irradiated natural IIa diamond

Low-temperature photoluminescence characteristic of Tm-doped Ga 2 O 3 films for light emitting diodes application

Unraveling Abnormal Thermal Quenching of Sub‐Gap Emission in Β‐ga2o3

Microstructure, Optical, and Photoluminescence Properties of Β-Ga2o3 Films Prepared by Pulsed Laser Deposition under Different Oxygen Partial Pressures*