Abstract:Enhanced 395nm ultraviolet photoluminescence (PL) has been obtained from the SiO2/Ge SiO2/ SiO2 sandwiched structure. As light source for optical data storage system, this structure will be very useful in optoelectronic integration. Simultaneously, infrared light emission peaked at 780nm was also observed in this novel structure. In this paper, we discussed the origin of the infrared PL in terms of infrared spec- troscopy (FT-IR) and FL excitation (PLE) spectra. The constancy of the 780nm PL band with annealing temperature does suggest that it can not arise from both the quantum confinement on Ge, Si nanocrystals and the oxygen deficient defects of Ge and Si, because PL from these radiative centers all have peak shifts to some extent. The experimental results from FT-IR strongly suggest that the Ge-O-Ge vibration intensity and the 780nm PL intensity have a similar behavior with annealing temperature. So it is reasonable to be- lieve that the infrared PL band is very related to Ge oxides. Further PLE examination results indicate that it has the similar excitation process to the 395nm ultraviolet PL which comes from TⅡ'(T)→S0 optical transitions in GeO color centers, which has been confirmed by many research groups. So we believe that the 780nm PL should also originate from GeO color centers. The schematic diagram of electronic states of GeO molecule is presented to describe the carriers' excitation and recombination process in this kind of centers. The TⅡ'→S0 optical transitions in GeO color center is responsible for the infrared PL. In GeO molecules, all radiative transitions are intramolecular. Thus the PL bands from the GeO color centers are hardly influ- enced by the SiO2 network. That is why 780nm infrared PL has no wavelength change with different annealing temperature. Our work paves the way for the sandwiched structure's device applications.

Strong violet–blue photoluminescence from Ge oxide films by magnetron sputtering

Strong Violet Emission from Ge-SiO2 Co-Sputtered Films Annealed in O2

Strong violet emission from Ge–SiO2 co-sputtered films annealed in O2 atmosphere

Origin of Infrared Photoluminescence from SiO_2/Ge: SiO_2/SiO_2 Sandwiched Structure [J]

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Violet Photoluminescence from Ge+-implanted Si-based Nanoscale SiO2 Islands Array

Room temperature photoluminescence from Zr4+-doped sol–gel silica

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Violet Luminescence Emitted from ZnO Films Deposited on Si Substrate by Rf Magnetron Sputtering

Growth and Optical Properties of Ge Oxide Thin Film on Silicon Substrate by Pulsed Laser Deposition

Enhanced Ultraviolet Photoluminescence from Sio2/Ge : Sio2/Sio2 Sandwiched Structure

Origin of Photoluminescence Peaks in Ge–SiO2 Thin Films

Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence

Optical Properties of the Low-Energy Ge-Implanted and Annealed Sio2 Films

The Photoluminescence Properties of β-Ga2O3 Thin Films

On the Origin of Strong Visible Photoluminescence in a Ge / Porous Si Structure

Photoluminescence of Ga2O3 Thin Film and Characterization of Laser Ablated Species

Strong Ultraviolet Photoluminescence From Silicon Oxide Films Prepared By Magnetron Sputtering

Structural Relaxation and Long-Lasting Phosphorescence in Sol-Gel-Derived Geo2 Glass after Ultraviolet Light Irradiation

Orange-Green Emission from Porous Si Coated with Ge Films

Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature