Abstract:Enhanced 395nm ultraviolet photoluminescence (PL) has been obtained from the SiO2/Ge SiO2/ SiO2 sandwiched structure. As light source for optical data storage system, this structure will be very useful in optoelectronic integration. Simultaneously, infrared light emission peaked at 780nm was also observed in this novel structure. In this paper, we discussed the origin of the infrared PL in terms of infrared spec- troscopy (FT-IR) and FL excitation (PLE) spectra. The constancy of the 780nm PL band with annealing temperature does suggest that it can not arise from both the quantum confinement on Ge, Si nanocrystals and the oxygen deficient defects of Ge and Si, because PL from these radiative centers all have peak shifts to some extent. The experimental results from FT-IR strongly suggest that the Ge-O-Ge vibration intensity and the 780nm PL intensity have a similar behavior with annealing temperature. So it is reasonable to be- lieve that the infrared PL band is very related to Ge oxides. Further PLE examination results indicate that it has the similar excitation process to the 395nm ultraviolet PL which comes from TⅡ'(T)→S0 optical transitions in GeO color centers, which has been confirmed by many research groups. So we believe that the 780nm PL should also originate from GeO color centers. The schematic diagram of electronic states of GeO molecule is presented to describe the carriers' excitation and recombination process in this kind of centers. The TⅡ'→S0 optical transitions in GeO color center is responsible for the infrared PL. In GeO molecules, all radiative transitions are intramolecular. Thus the PL bands from the GeO color centers are hardly influ- enced by the SiO2 network. That is why 780nm infrared PL has no wavelength change with different annealing temperature. Our work paves the way for the sandwiched structure's device applications.

Growth and Optical Properties of Ge Oxide Thin Film on Silicon Substrate by Pulsed Laser Deposition

Origin of Infrared Photoluminescence from SiO_2/Ge: SiO_2/SiO_2 Sandwiched Structure [J]

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature

Strong violet emission from Ge–SiO2 co-sputtered films annealed in O2 atmosphere

Orange-Green Emission from Porous Si Coated with Ge Films

Orange-Green Emission from Porous Si Coated with Ge Films: the Role of Ge-Related Defects

Optical properties of Ge/Si quantum dot superlattices

Optical Properties of the Low-Energy Ge-Implanted and Annealed Sio2 Films

Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si, 1-x-y Ge x C y Thin Films on Si(100) Substrate

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Strong violet–blue photoluminescence from Ge oxide films by magnetron sputtering

Origin of Photoluminescence Peaks in Ge–SiO2 Thin Films

Atomic Layer-By-Layer Oxidation Of Ge (100) And (111) Surfaces By Plasma Post Oxidation Of Al2o3/Ge Structures

Strong Violet Emission from Ge-SiO2 Co-Sputtered Films Annealed in O2

Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources

Growth and Characterization of Si-doped Β-Ga2o3 Films by Pulsed Laser Deposition

The UV-induced positive and negative refractive index changes in GeO<sub>2</sub>-SiO<sub>2</sub> films

Room-temperature photoluminescence of thermally oxidized Si1-x-yGexCy thin films on Si (100) substrates

Strong Visible Photoluminescence from Ge/Porous Si Structure

Growth of Zn1-xMgxO Films by Pulsed Laser Deposition