Abstract:NiSi1-xGex films on compressively strained as well as relaxed undoped Si1-xGex epitaxially grown substrates with x=0.06-0.30 on Si(001) wafers have been studied with respect to the relative orientation of film and substrate after annealing at temperatures in the range 400-850 degreesC. Using x-ray diffraction, transmission electron microscopy, and pole-figure measurements, it was found that only the monogermanosilicide phase formed above 450 degreesC and was the only phase still at 850 degreesC. New information regarding the effects of Ge on the silicidation of Ni was also found. Thus, the preferred plane parallel to the surface is (013). Compared to NiSi, Ge suppresses the development of the other planes parallel to the surface except (013). Within this plane, the orientations of the grains pile up in such a way that the configuration NiSi1-xGex[100]//Si1-xGex[100] is avoided, which in the pole-figures leads to broad peaks in-between the substrate [100] and [010]. In addition, peaks indicating the epitaxial alignment NiSi0.8Ge0.2(+/-21-1) or (+/-2-11)//Si0.8Ge0.2(+/-2+/-20) coupled with NiSi0.8Ge0.2(+/-100)approximate to//Si0.8Ge0.2(+/-100) or (0+/-10) were found. Fine structure in the broad peaks is found to be due to lateral epitaxial alignments between grains along their common grain boundary. Based on the nonexistence of NiGe2, the observations are interpreted in terms of Ge preventing the formation of certain Ni-Ge bonds at the interface between NiSi1-xGex and the Si1-xGex substrate.

The UV-induced positive and negative refractive index changes in GeO<sub>2</sub>-SiO<sub>2</sub> films

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Optical Properties of Highly Photosensitive Hybrid Sol-Gel Films

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

Tailoring of structural and optical properties of GeO x thin films using 100 MeV Si ions

UV Irradiation-Induced Defect Study Ofgeo2−sio2

Optical Properties of the Low-Energy Ge-Implanted and Annealed Sio2 Films

In Situ Optical Characterizations of the Annealing Effects Upon Sno2: F Films by Spectroscopic Ellipsometry

Strong violet emission from Ge–SiO2 co-sputtered films annealed in O2 atmosphere

Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

Growth and Optical Properties of Ge Oxide Thin Film on Silicon Substrate by Pulsed Laser Deposition

Strong Violet Emission from Ge-SiO2 Co-Sputtered Films Annealed in O2

Characterization of Excimer Laser Annealed Polycrystalline Si1−xGex Alloy Thin Films by X-Ray Diffraction and Spectroscopic Ellipsometry

Preparation and Characterization of Sol–gel Processed GeO2/methyltrimethoxysilane Hybrid Thin Films

Origin of Photoluminescence Peaks in Ge–SiO2 Thin Films

GeO2/organically Modified Silane Sol-Gel Hybrid Organic-Inorganic Films for Photonic Applications

FTIR and XPS Investigation of Er-doped SiO2–TiO2 Films

Refractive Index Adjustment of SiO2 Gel Glass with Zirconium Oxychloride