Abstract:Enhanced 395nm ultraviolet photoluminescence (PL) has been obtained from the SiO2/Ge SiO2/ SiO2 sandwiched structure. As light source for optical data storage system, this structure will be very useful in optoelectronic integration. Simultaneously, infrared light emission peaked at 780nm was also observed in this novel structure. In this paper, we discussed the origin of the infrared PL in terms of infrared spec- troscopy (FT-IR) and FL excitation (PLE) spectra. The constancy of the 780nm PL band with annealing temperature does suggest that it can not arise from both the quantum confinement on Ge, Si nanocrystals and the oxygen deficient defects of Ge and Si, because PL from these radiative centers all have peak shifts to some extent. The experimental results from FT-IR strongly suggest that the Ge-O-Ge vibration intensity and the 780nm PL intensity have a similar behavior with annealing temperature. So it is reasonable to be- lieve that the infrared PL band is very related to Ge oxides. Further PLE examination results indicate that it has the similar excitation process to the 395nm ultraviolet PL which comes from TⅡ'(T)→S0 optical transitions in GeO color centers, which has been confirmed by many research groups. So we believe that the 780nm PL should also originate from GeO color centers. The schematic diagram of electronic states of GeO molecule is presented to describe the carriers' excitation and recombination process in this kind of centers. The TⅡ'→S0 optical transitions in GeO color center is responsible for the infrared PL. In GeO molecules, all radiative transitions are intramolecular. Thus the PL bands from the GeO color centers are hardly influ- enced by the SiO2 network. That is why 780nm infrared PL has no wavelength change with different annealing temperature. Our work paves the way for the sandwiched structure's device applications.

Tailoring of structural and optical properties of GeO x thin films using 100 MeV Si ions

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Origin of Infrared Photoluminescence from SiO_2/Ge: SiO_2/SiO_2 Sandwiched Structure [J]

Tuning the bandgap and photoluminescence properties of Ge/Al2O3 multilayer thin films using annealing and ion beam irradiation

The UV-induced positive and negative refractive index changes in GeO<sub>2</sub>-SiO<sub>2</sub> films

Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

Optical Properties of the Low-Energy Ge-Implanted and Annealed Sio2 Films

Isochronal and Isothermal Annealing Effects on Si1-xGex Thin Film by Ion Beam Sputtering

Microstructure and Optical Properties of Ge Films Prepared by Ion Beam Assisted Deposition

Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature

Modification of Optical Bandgap of Thin Silicon Films Induced by 94 MeV Xe Ion Irradiation

Irradiation Effects on the Structural and Optical Properties of Single Crystal Β-Ga2o3

Electroluminescence from Er-doped GeO 2 nanofilms fabricated by atomic layer deposition on silicon: Effect of annealing temperature on film properties

Effects of Ge Doping Through Ion Implantation on the Structural and Optical Properties of Zno Thin Films Prepared by Sol-Gel Technique

Nanoscale Modification of Optical Properties in Ge-Doped Sio2 Glass by Electron-Beam Irradiation

Absorption, Structural, and Electrical Properties of Ge Films Prepared by Ion-Beam-assisted Deposition.

Properties of gallium oxide thin films grown by ion beam sputter deposition at room temperature

Defect-related Infrared Photoluminescence in Ge+-implanted SiO2 Films

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

Photoinduced changes of structure and properties in amorphous GeSe2 films