Abstract:Enhanced 395nm ultraviolet photoluminescence (PL) has been obtained from the SiO2/Ge SiO2/ SiO2 sandwiched structure. As light source for optical data storage system, this structure will be very useful in optoelectronic integration. Simultaneously, infrared light emission peaked at 780nm was also observed in this novel structure. In this paper, we discussed the origin of the infrared PL in terms of infrared spec- troscopy (FT-IR) and FL excitation (PLE) spectra. The constancy of the 780nm PL band with annealing temperature does suggest that it can not arise from both the quantum confinement on Ge, Si nanocrystals and the oxygen deficient defects of Ge and Si, because PL from these radiative centers all have peak shifts to some extent. The experimental results from FT-IR strongly suggest that the Ge-O-Ge vibration intensity and the 780nm PL intensity have a similar behavior with annealing temperature. So it is reasonable to be- lieve that the infrared PL band is very related to Ge oxides. Further PLE examination results indicate that it has the similar excitation process to the 395nm ultraviolet PL which comes from TⅡ'(T)→S0 optical transitions in GeO color centers, which has been confirmed by many research groups. So we believe that the 780nm PL should also originate from GeO color centers. The schematic diagram of electronic states of GeO molecule is presented to describe the carriers' excitation and recombination process in this kind of centers. The TⅡ'→S0 optical transitions in GeO color center is responsible for the infrared PL. In GeO molecules, all radiative transitions are intramolecular. Thus the PL bands from the GeO color centers are hardly influ- enced by the SiO2 network. That is why 780nm infrared PL has no wavelength change with different annealing temperature. Our work paves the way for the sandwiched structure's device applications.

Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature

Origin of Infrared Photoluminescence from SiO_2/Ge: SiO_2/SiO_2 Sandwiched Structure [J]

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Optical Properties of the Low-Energy Ge-Implanted and Annealed Sio2 Films

Origin of Photoluminescence Peaks in Ge–SiO2 Thin Films

Optical properties of Ge/Si quantum dot superlattices

Defect-related Infrared Photoluminescence in Ge+-implanted SiO2 Films

Strong violet emission from Ge–SiO2 co-sputtered films annealed in O2 atmosphere

Growth and Optical Properties of Ge Oxide Thin Film on Silicon Substrate by Pulsed Laser Deposition

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Promising Features of Low-Temperature Grown Ge Nanostructures on Si(001) Substrates

Tailoring of structural and optical properties of GeO x thin films using 100 MeV Si ions

The UV-induced positive and negative refractive index changes in GeO<sub>2</sub>-SiO<sub>2</sub> films

Nanocrystalline formation and optical properties of germanium thin films prepared by physical vapor deposition

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

Strong Violet Emission from Ge-SiO2 Co-Sputtered Films Annealed in O2

Phase Transformation and Photoluminescence Properties of Er Silicate Films by Sol-Gel Method

Photoluminescence from Nanometer Ge Particle Embedded Si Oxide Films