Abstract:Strained GexSi1-x/Si superlattices with Ge content of 0.48 and 0.49 grown by MBE at 420°C (sample A) and 570°C (sample B) were annealed and studied by X-ray diffraction, Raman scattering and TEM. The cross section TEM image of the samples before annealing showed that the growth of sample A was two-dimensional, but for sample B, the growth of the GexSi1-x layer was three-dimensional. By the X-ray diffraction spectra before and after annealing for samples A and B, the strain relaxations from X-ray diffraction measurements were 27% and 35% for samples A and B, respectively. This difference might be from the three-dimensional growth of sample B, in which the strain was stronger than that in sample A. Raman scattering measurements showed that the Ge-Ge peak and the Ge-Si peak shifted towards the lower energy after annealing, while the Si-Si peak shifted towards the higher energy. The reason for the shift of these peaks could be explained by the common contribution of the strain relaxation and the internal diffusion of Ge atoms into the Si layer. In addition, the behavior of the strained GexSi1-x/Si superlattice annealed by rapid thermal annealing technology was also studied. A sample of superlattice with a Ge content of 0.46 was rapidly thermal annealed at the temperature range of 600 to 1000°C and at each temperature the sample was annealed twice for 40 s each time. From X-ray diffraction measurements it could be found that as the annealing temperature increased from 600 to 900°C, the strain relaxation would increase from 19% up to 57%. As the sample was annealed at 1000°C, no satellite peaks were in the X-ray diffraction spectra and no multilayer structure could be observed in the cross section TEM image, that is, in the sample the GeSi layers were completely mixed up with the Si layers.

Isochronal and Isothermal Annealing Effects on Si1-xGex Thin Film by Ion Beam Sputtering

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Characterization of Excimer Laser Annealed Polycrystalline Si1−xGex Alloy Thin Films by X-Ray Diffraction and Spectroscopic Ellipsometry

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

Studies of Morphological Instability and Dislocation Formation in Heteroepitaxial Si1−xGex Thin Films Via Controlled Annealing Experiments

Effects of Si-ion implantation on crystallization behavior of Ge 2 Sb 2 Te 5 film

Effcet of Annealing on Si1-x-yGexCy Alloys Grown by Ultra-high Vacuum Chemical Vapor Deposition

Structural Evolution of Ge-rich Si1−xGex Films Deposited by Jet-Icpcvd

Annealing Effects on the Microstructure of Ge/Si(001) Quantum Dots

The Recrystallization Properties of Poly-Ge x Si 1-x ON SiO 2 /Si

The Recrystallization Properties of Poly-Ge<sub>x</sub>Si<sub>1-x</sub>ON SiO<sub>2</sub>/Si

The Recrystallization Properties of Poly-GexSi1-xON SiO2/Si

An investigation on the thermal stability of the GexSi1-x⧸Si superlattice grown by MBE